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4
Document Number: 70061
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG406, DG407
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= ± 10 V, I
S
= - 10 mA
sequence each switch on
Room
Full
50
100
125
100
125
R
DS(on)
Matching Between
Channels
g
R
DS(on)
V
D
= ± 10 V Room 5 %
Source Off Leakage Current I
S(off)
V
EN
= 0 V
V
D
= ± 10 V
V
S
= ± 10 V
Room
Full
0.01
- 0.5
- 50
0.5
50
- 0.5
- 5
0.5
5
nA
Drain Off Leakage Current I
D(off)
DG406
Room
Full
0.04
- 1
- 200
1
200
- 1
- 40
1
40
DG407
Room
Full
0.04
- 1
- 100
1
100
- 1
- 20
1
20
Drain On Leakage Current I
D(on)
V
S
= V
D
= ± 10
sequence each
switch on
DG406
Room
Full
0.04
- 1
- 200
1
200
- 1
- 40
1
40
DG407
Room
Full
0.04
- 1
- 100
1
100
- 1
- 20
1
20
Digital Control
Logic High Input Voltage V
INH
Full 2.4 2.4
V
Logic Low Input Voltage V
INL
Full 0.8 0.8
Logic High Input Current I
AH
V
A
= 2.4 V, 15 V Full - 1 1 - 1 1
µA
Logic Low Input Current I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V Full - 1 1 - 1 1
Logic Input Capacitance C
in
f = 1 MHz Room 7 pF
Dynamic Characteristics
Transition Time t
TRANS
see figure 2
Room
Full
200 350
450
350
450
ns
Break-Before-Make Interval t
OPEN
see figure 4
Room
Full
50 25
10
25
10
Enable Turn-On Time t
ON(EN)
see figure 3
Room
Full
150 200
400
200
400
Enable Turn-Off Time t
OFF(EN)
Room
Full
70 150
300
150
300
Charge Injection Q V
S
= 0 V, C
L
= 1 nF, R
S
= 0 Room 15 pC
Off Isolation
h
OIRR
V
EN
= 0 V, R
L
= 1 k
f = 100 kHz
Room - 69 dB
Source Off Capacitance C
S(off)
V
EN
= 0 V, V
S
= 0 V, f = 1 MHz Room 8
pF
Drain Off Capacitance C
D(off) V
EN
= 0 V
V
D
= 0 V
f = 1 MHz
Room 130
DG407 Room 65
Drain On Capacitance C
D(on)
DG406 Room 140
DG407 Room 70
Power Supplies
Positive Supply Current I+
V
EN
= V
A
= 0 or 5 V
Room
Full
13 30
75
30
75
µA
Negative Supply Current I-
Room
Full
- 0.01 - 1
- 10
- 1
- 10
Positive Supply Current I+
V
EN
= 2.4 V, V
A
= 0 V
Room
Full
50 500
900
500
700
Negative Supply Current I-
Room
Full
- 0.01
- 20
- 20
- 20
- 20
Document Number: 70061
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
5
Vishay Siliconix
DG406, DG407
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. R
DS(on)
= R
DS(on)
max. - R
DS(on)
min.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(for Single Supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 12 0 12 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= 3 V, 10 V, I
S
= - 1 mA
sequence each switch on
Room 90 120 120
R
DS(on)
Matching Between
Channels
g
R
DS(on)
Room 5 %
Source Off Leakage Current I
S(off) V
EN
= 0 V
V
D
= 10 V or 0.5 V
V
S
= 0.5 V or 10 V
Room 0.01
nA
Drain Off Leakage Current I
D(off)
DG406 Room 0.04
DG407 Room 0.04
Drain On Leakage Current I
D(on)
V
S
= V
D
= ± 10
sequence each
switch on
DG406 Room 0.04
DG407 Room 0.04
Dynamic Characteristics
Switching Time of Multiplexer t
OPEN
V
S1
= 8 V, V
S8
= 0 V, V
IN
= 2.4 V Room 300 450 450
nsEnable Turn-On Time t
ON(EN)
V
INH
= 2.4 V, V
INL
= 0 V
V
S1
= 5 V
Room 250 600 600
Enable Turn-Off Time t
OFF(EN)
Room 150 300 300
Charge Injection Q C
L
= 1 nF, V
S
= 6 V, R
S
= 0 Room 20 pC
Power Supplies
Positive Supply Current I+
V
EN
= 0 V or 5 V, V
A
= 0 V or 5 V
Room
Full
13 30
75
30
75
µA
Negative Supply Current I-
Room
Full
- 0.01
- 20
- 20
- 20
- 20
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Document Number: 70061
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG406, DG407
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
R
DS(on)
vs. V
D
and Supply
R
DS(on)
vs. V
D
and Supply
I
D
, I
S
Leakages vs. Temperature
V
D
- Drain Voltage (V)
160
120
80
40
0
- 20 20 - 4- 12 4 12
± 5 V
± 10 V
± 12 V
± 15 V
± 20 V
± 8 V
- On-Resistance (Ω)
R
DS(on)
V
D
- Drain Voltage (V)
160
120
80
40
0
0204 8 12 16
V+ = 7.5 V
200
240
V- = 0 V
10 V
12 V
15 V
20 V
22 V
- On-Resistance (Ω)R
DS(on)
Temperature (°C)
- Current , I
S
I
D
V+ = 15 V
V- = - 15 V
V
D
= "14 V
I
D(on)
, I
D(of f)
I
S( of f)
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA
- 55 - 35 - 15 5 2 5 4 5 6 5 8 5 105 125
R
DS(on)
vs. V
D
and Temperature
I
D
, I
S
Leakage Currents vs. Analog Voltage
Switching Times vs. Bipolar Supplies
V
D
- Drain Voltage (V)
0
40
30
20
10
70
60
50
15105- 15 - 10 - 5 0
- 55 °C
- 40 °C
0 °C
25 °C
85 °C
125 °C
V+ = 15 V
V- = - 15 V
- On-Resistance (Ω)
R
DS(on)
V
S
, V
D
- Source Drain Voltage (V)
- Current (pA), I
S
I
D
120
- 120
- 15 - 10 - 5 0 5 10 15
- 80
- 40
0
40
80
V+ = 15 V
V- = - 15 V
V
S
= - V
D
for I
D(of f)
V
D
= V
S(open)
for I
D(on)
DG406 I
D(on)
, I
D(of f)
I
S( of f)
DG407 I
D(on)
, I
D(of f)
V
SUPPL Y
- Supply Voltage (V)
Time (ns)
350
300
150
100
50
0
± 5 ± 10 ± 15 ± 20
200
250
t
TRA N S
t
ON(E N)
t
OFF(E N )

DG406DW-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Multiplexer Switch ICs 16 CH MUX IN WBSOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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