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4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VDI 50-12P1 VII 50-12P1
VID 50-12P1 VIO 50-12P1
0650
B3
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 204060
0
5
10
15
0
50
100
150
0 204060
0
4
8
12
0
200
400
600
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 20 40 60 80 100
0
2
4
6
8
0
200
400
600
800
0 20406080100
0
1
2
3
4
0
40
80
120
160
single pulse
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 47 Ω
T
VJ
= 125°C
0 200 400 600 800 1000 1200 1400
0
20
40
60
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
VJ
= 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
42T120
42T120
42T120
42T120
42T120
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
R
G
= 47 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
MDI...50-12P1
