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ZUMT619TA

P1-P3
Super323SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 2 - DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
*I
C
CONT 1A
* 2A Peak Pulse Current
* Excellent H
FE
Characteristics Up To 2A (pulsed)
* Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
* LCD backlighting inverter circuits
* Boost functions in DC-DC converters
DEVICE TYPE COMPLEMENT PARTMARKING R
CE(sat)
ZUMT619 ZUMT720 T63 160mΩ at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current** I
CM
2A
Continuous Collector Current I
C
1.0 A
Base Current I
B
200 mA
Power Dissipation at T
amb
=25°C P
tot
385 †
500 ‡
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50 V
I
C
= 100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50 V I
C
= 10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
= 100µA
Collector Cut-Off
Current
I
CBO
10 nA V
CB
= 40V
Emitter Cut-Off
Current
I
EBO
10 nA V
EB
= 4V
Collector Emitter
Cut-Off Current
I
CES
10 nA V
CES
= 40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
24
60
120
160
35
80
200
270
mV
mV
mV
mV
I
C
= 100mA, I
B
= 10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
940 1100 mV I
C
= 1A, I
B
= 50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
850 1100 mV I
C
= 1A, V
CE
= 2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
75
20
420
450
350
130
60
I
C
=10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
=2 V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
= 2V*
I
C
= 1.5A, V
CE
=2 V*
Transition
Frequency
f
T
215 MHz I
C
= 50mA, V
CE
=10V
f= 100MHz
Output Capacitance C
obo
6 pF V
CB
= 10V, f=1MHz
Turn-On Time t
(on)
150 ns V
CC
=10 V, I
C
= 1A
I
B1
=I
B2
=100mA
Turn-Off Time t
(off)
425 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT619
ZUMT619
1m
1m
1m
100m 100
1m
1m
IC - Collector Current (A)
VCE(sat) v IC
0
VCE(sat) - (V)
IC/IB=10
IC/IB=50
IC/IB=100
+25°C
-55°C
hFE - Typical Gain
+100°C
0
IC - Collector Current (A)
hFE v IC
V
BE(on)
- (V)
0
IC - Collector Current (A)
VBE(on) v IC
+100°C
+150°C
VCE(sat) - (V)
+25°C
0
IC - Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
VBE(sat) - (V)
+25°C
0
IC - Collector Current (A)
VBE(sat) v IC
1s
100ms
IC - Collector Current (A)
10
DC
10m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
+25°C
-55°C
IC/IB=50
VCE=2V
-55°C
IC/IB=50
+25°C
+150°C
+100°C
-55°C
10m 100m 1 10
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
10m 100m 1 10
10m 100m 1 10
10m 100m 1 10
10m 100m 1 10
200
400
600
800
0.2
0.4
0.6
0.8
1.0
0.3
0.6
0.9
1.15
110
100m
1
TYPICAL CHARACTERISTICS
P1-P3

ZUMT619TA

Mfr. #:
Buy ZUMT619TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN Super323
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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