AOT410L/AOB410L
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 10
T
J
=55°C 50
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
2 3 4 V
I
D(ON)
405 A
5.1 6.5
T
J
=125°C 8.8 11
5.8 7.5 mΩ
4.8 6.2
mΩ
5.5 7.2 mΩ
g
FS
70 S
V
SD
0.63 1 V
I
S
150 A
C
iss
5290 6622 7950 pF
C
oss
415 594 770 pF
C
rss
130 215 300 pF
R
g
0.3 0.64 1 Ω
Q
g
(10V) 85 107 129 nC
Q
gs
23 28.5 34 nC
Q
gd
24 40 56 nC
t
D(on)
28 ns
t
r
22 ns
t
D(off)
43.5 ns
t
f
14.5 ns
t
rr
19 27 35 ns
Q
rr
124 177 230
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
TO263
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
V
DS
=0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=7V, I
D
=20A
TO263
V
DS
=5V
,
I
D
=250µA
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=20A
Gate Source Charge
Gate Drain Charge
R
DS(ON)
Static Drain-Source On-Resistance
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
GS
=10V, I
D
=20A
mΩ
T0220
V
GS
=7V, I
D
=20A
T0220
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev1: Jul 2011 www.aosmd.com Page 2 of 7
