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IXDN504D1T/R

P1-P3P4-P6P7-P9P10-P11
First Release
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected up to 4 Amps
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 30V
• -55°C to +125°C Extended Operating
Temperature
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDF504, IXDI504 and IXDN504 each consist of two 4-
Amp CMOS high speed MOSFET Gate Drivers for driving
the latest IXYS MOSFETs & IGBTs. Each of the outputs
can source and sink 4 Amps of Peak Current while produc-
ing voltage rise and fall times of less than 15ns. The input
of each driver is TTL or CMOS compatible and is virtually
immune to latch up. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by very
fast, matched rise and fall times.
The IXDF504 is configured with one Gate Driver Inverting +
one Gate Driver Non-Inverting. The IXDI504 is configured as
a Dual Inverting Gate Driver, and the IXDN504 is configured
as a Dual Non-Inverting Gate Driver.
The IXDF504, IXDI504 and IXDN504 are each available in
the 8-Pin P-DIP (PI) package, the 8-Pin SOIC (SIA) pack-
age, and the 6-Lead DFN (D1) package, (which occupies
less than 65% of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number Description
Package
Type
Packing Style
Pack
Qty
Configuration
IXDF504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDF504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDF504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDF504D1 4A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDF504D1T/R 4A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Dual Drivers,
one Inverting
and one Non-
Inverting
IXDI504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDI504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDI504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDI504D1 4A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDI504D1T/R 4A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Dual Inverting
Drivers
IXDN504PI 4A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDN504SIA 4A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDN504SIAT/R 4A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDN504D1 4A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDN504D1T/R 4A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Dual Non-
Inverting
Drivers
DS99567A(10/07)
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDF504 / IXDI504 / IXDN504
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
2
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDF504 / IXDI504 / IXDN504
Figure 3 - IXDN504 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
Figure 2 - IXDI504 Dual Inverting 4A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 1 - IXDF504 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
*
*
*
*
* United States Patent 6,917,227
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
*
*
3
IXDF504 / IXDI504 / IXDN504
Unless otherwise noted, 4.5V ≤ V
CC
≤ 30V .
All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics @ T
A
= 25
o
C
(3)
Absolute Maximum Ratings
(1)
Operating Ratings
(2)
Parameter Value
Supply Voltage 35 V
All Other Pins (Unless specified -0.3 V to V
CC
+ 0.3V
otherwise)
Junction Temperature 150 °C
Storage Temperature -65 °C to 150 °C
Lead Temperature (10 Sec) 300 °C
Parameter Value
Operating Supply Voltage 4.5V to 30V
Operating Temperature Range -55 °C to 125 °C
(4)
IXYS reserves the right to change limits, test conditions, and dimensions.
Package Thermal Resistance *
8-Pin PDIP (PI)
θ
J-A
(typ) 125 °C/W
8-Pin SOIC (SIA)
θ
J-A
(typ) 200 °C/W
6-Lead DFN (D1)
θ
J-A
(typ) 125-200 °C/W
6-Lead DFN (D1)
θ
J-C
(max) 2.1 °C/W
6-Lead DFN (D1)
θ
J-S
(typ) 6.4 °C/W
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage
4.5V ≤ V
IN
≤ 18V
3 V
V
IL
Low input voltage
4.5V ≤ V
IN
≤ 18V
0.8 V
V
IN
Input voltage range
-5 V
CC
+ 0.3 V
I
IN
Input current
0V ≤ V
IN
≤ V
CC -10 10
µA
V
OH
High output voltage
V
CC
- 0.025 V
V
OL
Low output voltage
0.025 V
R
OH
High state output resistance
V
CC
= 18V
I
OUT
= 10mA
1.5 2.5
Ω
R
OL
Low state output resistance
V
CC
= 18V
I
OUT
= 10mA
1.2 2
Ω
I
PEAK
Peak output current
V
CC
= 15V
4 A
I
DC
Continuous output current
Limited by package
dissipation
1 A
t
R
Rise time
C
LOAD
=1000pF
V
CC
=18V
9 16 ns
t
F
Fall time
C
LOAD
=1000pF
V
CC
=18V
8 14 ns
t
ONDLY
On-time propagation delay
C
LOAD
=1000pF
V
CC
=18V
19 40 ns
t
OFFDLY
Off-time propagation delay
C
LOAD
=1000pF
V
CC
=18V
18 35 ns
V
CC
Power supply voltage
4.5 18 30 V
I
CC
Power supply current
V
CC
= 18V, V
IN
= 0V
V
IN
= 3.5V
V
IN
= V
CC
0.25 10
3
10
µA
mA
mA
P1-P3P4-P6P7-P9P10-P11

IXDN504D1T/R

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Description:
IC GATE DRIVER DUAL 4A 6-DFN
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