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STP6NK70Z

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
August 2006 Rev 4 1/16
16
STP6NK70Z
STF6NK70Z - STW6NK70Z
N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche rated
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STP6NK70Z 700 V < 1.8 Ω 5 A
STF6NK70Z 700 V <1.8 Ω 5 A
(1)
1. Limited only by maximum temperature allowed
STW6NK70Z 700 V < 1.8 Ω 5 A
TO-220FP
TO-220
1
2
3
TO-247
www.st.com
Order codes
Part number Marking Package Packaging
STP6NK70Z P6NK70Z TO-220 Tube
STF6NK70Z F6NK70Z TO-220FP Tube
STW6NK70Z W5NK90Z TO-247 Tube
Obsolete Product(s) - Obsolete Product(s)
Contents STP6NK70Z - STF6NK70Z - STW6NK70Z
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Obsolete Product(s) - Obsolete Product(s)
STP6NK70Z - STF6NK70Z - STW6NK70Z Electrical ratings
3/16
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220/TO-247 TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 700 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 5
5
(2)
A
I
D
Drain current (continuous) at T
C
=100°C 3.15
3.15
(2)
A
I
DM
(1)
1. Pulse width limited by safe operation area
Drain current (pulsed) 20
20
(2)
2. Limited only by maximum temperature allowed
A
P
TOT
Total dissipation at T
C
= 25°C 110 30 W
Derating factor 0.87 0.24 W/°C
V
ESD (G-S)
Gate source ESD (HBM-C=100pF,
R=1.5KΩ)
4000 V
dv/dt
(3)
3. I
SD
≤ 5 A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s; Tc= 25°C)
- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220/TO-247 TO-220FP
R
thj-case
Thermal resistance junction-case max 1.14 4.2 °C/W
R
thj-a
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STP6NK70Z

Mfr. #:
Buy STP6NK70Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 700V 1.5 Ohm 5A
Lifecycle:
New from this manufacturer.
Delivery:
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