CY7C1399BN-20ZXCT

256K (32K x 8) Static RAM
CY7C1399BN
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-06490 Rev. *A Revised August 31, 2006
Features
Temperature Ranges
Industrial: –40°C to 85°C
Automotive-A: –40°C to 85°C
Single 3.3V power supply
Ideal for low-voltage cache memory applications
High speed: 12 ns
Low active power
180 mW (max.)
Low-power alpha immune 6T cell
Available in Pb-free and non Pb-free Plastic SOJ and
TSOP I packages
Functional Description
[1]
The CY7C1399BN is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE
) and
active LOW Output Enable (OE
) and tri-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE
) controls the
writing/reading operation of the memory. When CE
and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE
and OE active LOW,
while WE
remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE
) is HIGH. The CY7C1399BN is available in 28-pin
standard 300-mil-wide SOJ and TSOP Type I packages.
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Selection Guide
-12 -15 -20
Maximum Access Time (ns) 12 15 20
Maximum Operating Current (mA) 55 50 45
Maximum CMOS Standby Current (µA) Commercial 500 500 500
Commercial (L) 50 50 50
Industrial 500 500
Automotive-A 500
L
og
i
c
Bl
oc
k
Di
agram
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
12
13
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
WE
V
CC
A
4
A
3
A
2
A
1
I/O
7
I/O
6
I/O
5
I/O
4
A
14
A
5
I/O
0
I/O
1
I/O
2
CE
OE
A
0
I/O
3
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
32K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
9
A
0
A
11
A
13
A
12
A
14
A
10
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CY7C1399BN
Document #: 001-06490 Rev. *A Page 2 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[2]
.... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Pin Configuration
22
23
24
25
26
27
28
1
2
5
10
11
15
14
13
12
16
19
18
17
Top View
TSOP
3
4
20
21
7
6
8
9
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A7
A
8
A
9
A
0
CE
I/O
7
I/O
6
I/O
5
GND
I/O
2
I/O
1
I/O
4
I/O
0
A
14
A
10
A
11
A
13
A
12
I/O
3
Operating Range
Range
Ambient
Temperature V
CC
Commercial 0°C to +70°C 3.3V ±300 mV
Industrial –40°C to +85°C
Automotive-A –40°C to +85°C
Electrical Characteristics Over the Operating Range
[1]
Parameter Description Test Conditions
-12 -15 -20
UnitMin. Max. Min. Max. Min. Max.
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= –2.0 mA 2.4 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 4.0 mA 0.4 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+
0.3V
2.2 V
CC
+
0.3V
2.2 V
CC
+
0.3V
V
V
IL
Input LOW Voltage
[2]
–0.3 0.8 –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage Current –1 +1 –1 +1 –1 +1 µA
I
OZ
Output Leakage
Current
GND V
I
V
CC
,
Output Disabled
–5 +5 –5 +5 –5 +5 µA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
55 50 45 mA
I
SB1
Automatic CE
Power-Down
Current—
TTL Inputs
Max. V
CC
, CE V
IH
,
V
IN
V
IH
, or V
IN
V
IL
,
f = f
MAX
Comm’l 5 5 5 mA
Comm’l (L) 4 4 mA
Ind’l 5 5
Auto-A 5
I
SB2
Automatic CE
Power-Down
Current— CMOS
Inputs
[3]
Max. V
CC
, CE V
CC
– 0.3V,
V
IN
V
CC
– 0.3V, or V
IN
0.3V,
WE V
CC
– 0.3V or WE 0.3V,
f=f
MAX
Comm’l 500 500 500 µA
Comm’l (L) 50 50 µA
Ind’l 500 500 µA
Auto-A 500 µA
Notes:
2. Minimum voltage is equal to2.0V for pulse durations of less than 20 ns.
3. Device draws low standby current regardless of switching on the addresses.
[+] Feedback
CY7C1399BN
Document #: 001-06490 Rev. *A Page 3 of 8
Capacitance
[4]
Parameter Description Test Conditions Max. Unit
C
IN
: Addresses Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 3.3V
5 pF
C
IN
: Controls 6 pF
C
OUT
Output Capacitance 6 pF
AC Test Loads and Waveforms
[5]
Switching Characteristics Over the Operating Range
[5]
Parameter Description
-12 -15 -20
UnitMin. Max. Min. Max. Min. Max.
Read Cycle
t
RC
Read Cycle Time 12 15 20 ns
t
AA
Address to Data Valid 12 15 20 ns
t
OHA
Data Hold from Address Change 3 3 3 ns
t
ACE
CE LOW to Data Valid 12 15 20 ns
t
DOE
OE LOW to Data Valid 5 6 7 ns
t
LZOE
OE LOW to Low Z
[6]
0 0 0 ns
t
HZOE
OE HIGH to High Z
[6, 7]
5 6 6 ns
t
LZCE
CE LOW to Low Z
[6]
3 3 3 ns
t
HZCE
CE HIGH to High Z
[6, 7]
6 7 7 ns
t
PU
CE LOW to Power-Up 0 0 0 ns
t
PD
CE HIGH to Power-Down 12 15 20 ns
Write Cycle
[8, 9]
t
WC
Write Cycle Time 12 15 20 ns
t
SCE
CE LOW to Write End 8 10 12 ns
t
AW
Address Set-Up to Write End 8 10 12 ns
t
HA
Address Hold from Write End 0 0 0 ns
t
SA
Address Set-Up to Write Start 0 0 0 ns
t
PWE
WE Pulse Width 8 10 12 ns
t
SD
Data Set-Up to Write End 7 8 10 ns
t
HD
Data Hold from Write End 0 0 0 ns
t
HZWE
WE LOW to High Z
[8]
7 7 7 ns
t
LZWE
WE HIGH to Low Z
[6]
3 3 3 ns
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and capacitance C
L
= 30 pF.
6. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
7. t
HZOE
, t
HZCE
, t
HZWE
are specified with C
L
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
8. The internal write time of the memory is defined by the overlap of CE
LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
9. The minimum write cycle time for write cycle #3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
3.0V
3.3V
OUTPUT
R1 317
R2
351
C
L
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
3ns
3
ns
OUTPUT 1.73V
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
167
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CY7C1399BN-20ZXCT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 256K PARALLEL 28TSOP I
Lifecycle:
New from this manufacturer.
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