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MT18KSF1G72PDZ-1G6P1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
Table 14: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision N)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb 1.35V
(512 Meg x 8) component data sheet
Parameter Symbol 1600 1333 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1 on
page
495 477 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
621 594 mA
Precharge power-down current: Slow exit I
DD2P0
2
144 144 mA
Precharge power-down current: Fast exit I
DD2P1
2
252 216 mA
Precharge quiet standby current I
DD2Q
2
432 396 mA
Precharge standby current I
DD2N
2
432 396 mA
Precharge stanby ODT current I
DD2NT
1
324 306 mA
Active power-down current I
DD3P
2
468 432 mA
Active standby current I
DD3N
2
540 504 mA
Burst read operating current I
DD4R
1
927 837 mA
Burst write operating current I
DD4W
1
927 837 mA
Refresh current I
DD5B
1
1647 1602 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
288 288 mA
All banks interleaved read current I
DD7
1
1242 1152 mA
Reset current I
DD8
2
180 180 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, DR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83ad1130
ksf18c512_1gx72pdz.pdf – Rev. K 10/14 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 15: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision P)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb 1.35V
(512 Meg x 8) component data sheet
Parameter Symbol 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
342 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
477 mA
Precharge power-down current: Slow exit I
DD2P0
2
180 mA
Precharge power-down current: Fast exit I
DD2P1
2
198 mA
Precharge quiet standby current I
DD2Q
2
270 mA
Precharge standby current I
DD2N
2
288 mA
Precharge stanby ODT current I
DD2NT
1
270 mA
Active power-down current I
DD3P
2
270 mA
Active standby current I
DD3N
2
360 mA
Burst read operating current I
DD4R
1
900 mA
Burst write operating current I
DD4W
1
999 mA
Refresh current I
DD5B
1
1458 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
270 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
414 mA
All banks interleaved read current I
DD7
1
2160 mA
Reset current I
DD8
2
234 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, DR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83ad1130
ksf18c512_1gx72pdz.pdf – Rev. K 10/14 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 16: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent; Note 1 applies to entire table
Parameter Symbol Pins Min Nom Max Units Notes
DC supply voltage V
DD
– 1.283 1.35 1.45 V
1.425 1.5 1.575 V 2
DC reference volt-
age
V
REF
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV – V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4 – V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV – V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4 – V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
– V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0 – 0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350 – V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out# – – TBD mA
Low-level output
current
I
OL
Err_Out# TBD – TBD mA
Notes:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
2. The register is backward-compatible with 1.5V operation. Refer to device specification
for details and operation guidance.
4GB, 8GB (x72, DR) 240-Pin 1.35V DDR3L RDIMM
Registering Clock Driver Specifications
PDF: 09005aef83ad1130
ksf18c512_1gx72pdz.pdf – Rev. K 10/14 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

MT18KSF1G72PDZ-1G6P1

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Buy MT18KSF1G72PDZ-1G6P1
Manufacturer:
Micron
Description:
Memory Modules DDR3 8GB RDIMM
Lifecycle:
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