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MJE243G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 16
1 Publication Order Number:
MJE243/D
MJE243G (NPN),
MJE253G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current Gain Bandwidth Product
• Annular Construction for Low Leakages
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
7.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
15
120
W
mW/_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
1.5
12
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.34
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.4
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
http://onsemi.com
MJE243G
TO−225
(Pb−Free)
500 Units/Box
MARKING DIAGRAM
Y = Year
WW = Work Week
JE2x3 = Device Code
x = 4 or 5
G = Pb−Free Package
MJE253G
TO−225
(Pb−Free)
500 Units/Box
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP
NPN
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
JE2x3G
MJE243G (NPN), MJE253G (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
100 −
V
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CE
= 100 Vdc, I
E
= 0, T
C
= 125_C)
I
CBO
−
−
0.1
0.1
mA
mA
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
I
EBO
− 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 200 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
h
FE
40
15
180
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
−
−
0.3
0.6
V
Base−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
V
BE(sat)
− 1.8
V
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.5
V
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
40 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
− 50
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MJE243G (NPN), MJE253G (PNP)
http://onsemi.com
3
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
40 60 100 120 160
12
P
D
, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0
0.4
80 140
T
C
P
D
, POWER DISSIPATION (WATTS)
T
A
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1K
I
C
, COLLECTOR CURRENT (AMPS)
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
500
300
200
100
50
t
d
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn−On Time
3
2
5213
t
r
NPN MJE243
PNP MJE253
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
q
JC
(t) = r(t) q
JC
q
JC
= 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
P1-P3P4-P6

MJE243G

Mfr. #:
Buy MJE243G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 4A 100V 15W NPN
Lifecycle:
New from this manufacturer.
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