Characteristics STPS15L45C-Y
2/8 Doc ID018565 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
∆T
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms voltage 10 A
I
F(AV)
Average forward current
T
c
= 140 °C
δ = 0.5
Per diode
Per device
7.5
15
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 75 A
I
RRM
Peak repetitive reverse current
t
p
= 2 µs square
F = 1 kHz
1A
P
ARM
Repetitive peak avalanche power t
p
= 10 µs T
j
= 125 °C 266 W
T
stg
Storage temperature range
-65 to
+175
°C
T
j
Maximum operating junction temperature range
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-40 to
+150
°C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
4
2.4
°C/W
R
th(c)
Coupling 0.7
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-1mA
T
j
= 125 °C - 23 45 mA
