FMMT596TC

Issue 4 - July 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

FMMT596

SOT 23 PNP silicon planar high voltage transistor

Ordering information

Device marking

596

Absolute maximum ratings

Device Reel size

(inches

Tape width

(mm)

Quantity

per reel

FMMT596TA 7 8 3,000

Parameter Symbol Value Unit

Collector-base voltage V

CBO

-220 V

Collector-emitter voltage V

CEO

-200 V

Emitter-base voltage V

EBO

-5 V

Peak pulse current I

CM

-1 A

Continuous collector current I

C

-0.3 A

Base current I

B

-200 mA

Power dissipation at T

amb

=25°C P

tot

500 mW

Operating and storage temperature range T

j

:T

stg

-55 to +150 °C

C

E

B

Pinout - top view

C

E

B

FMMT596

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© Zetex Semiconductors plc 2007

Electrical characteristics (T

amb

= 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

voltage

V

(BR)CBO

-220 V I

C

=-100␮A

Collector-emitter breakdown

voltage

V

(BR)CEO

-200 V

I

C

=-10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle ⱕ2%.

Emitter-base breakdown

voltage

V

(BR)EBO

-5 V I

E

=-100␮A

Collector cut-off current I

CBO

-100 nA V

CB

=-200V

Emitter cut-off current I

EBO

-100 nA V

EB

=-4V

Collector-emitter cut-off

current

I

CES

-100 nA V

CES

=-200V

Collector-emitter saturation

voltage

V

CE(sat)

-0.2

-0.35

V

V

I

C

=-100mA, I

B

=-10mA,

I

B

=-250mA,

I

B

=-25mA

(*)

Base-emitter saturation

voltage

V

BE(sat)

-1.0 V

I

C

=-250mA, I

B

=-25mA

(*)

Base-emitter turn-on voltage V

BE(on)

-0.9 V I

C

=-250mA,

V

CE

=-10V

(*)

Static forward current

transfer ratio

h

FE

100 I

C

=-1mA, V

CE

=-10V

100

I

C

=-100mA, V

CE

=-10V

(*)

85 300

I

C

=-250mA, V

CE

=-10V

(*)

35

I

C

=-400mA, V

CE

=-10V

(*)

Transition frequency f

T

150 MHz I

C

=-50mA, V

CE

=-10V,

f=100MHz

Output capacitance C

obo

10 pF V

CB

=-10V, f=1MHz

Switching times td 22 ns I

C

=-200mA, V

CC

=-80V

I

b1

=I

b2

=-20mA

tr 19

ts 472

tf 70

Switching times td 44 ns I

C

=-100mA, V

CC

=-80V

I

b1

=I

b2

=-10mA

tr 31

ts 665

tf 76

FMMT596

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© Zetex Semiconductors plc 2007

Typucal characteristics

1mA

0

0.1

0.2

0.3

0.4

+25°C

I

C

/I

B

=10

I

C

/I

B

=50

10mA 100mA

I

C

-collector current

V

CE(sat)

v I

C

V

CE(sat)

- (V)

1A 1mA

0

0.1

0.2

0.3

0.4

-55°C

+25°C

+100°C

I

C

/I

B

=10

10mA 100mA

I

C

-collector current

V

CE(sat)

v I

C

V

CE(sat)

- (V)

1mA

1mA

0

80

160

240

320

+100°C

+25°C

-55°C

V

CE

=10V

10mA 100mA

I

C

-collector current

h

FE

v I

C

h

FE

- typical gain

1A 1mA

0

0.2

0.4

0.6

0.8

1.0

-55°C

+25°C

+100°C

-55°C

+25°C

+100°C

I

C

/I

B

=10

V

CE

=10V

10mA 100mA

I

C

-collector current

V

BE(sat)

v I

C

V

BE(sat)

- (V)

1mA

1mA

0

0.4

0.2

0.6

0.8

1.0

10mA 100mA

I

C

-collector current

V

BE(on)

v I

C

V

BE(on)

- (V)

1A 0.1V

0.001

0.01

0.1

1

DC

1s

100ms

1ms

100␮s

1V 10V

V

CE

-collector emitter voltage (V)

Safe operating area

I

C

-collector current (A)

100V 1000V

FMMT596TC

Mfr. #:

Manufacturer:

Description:

TRANS PNP 200V 0.3A SOT23-3

Lifecycle:

New from this manufacturer.

Delivery:

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