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ZXTN5551FLTA

P1-P3P4-P6P7-P8
Issue 1 - August 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTN5551FL
160V, SOT23, NPN High voltage transistor
Summary
BV
CEO
> 160V
BV
EBO
> 6V
I
C(cont)
= 600mA
P
D
= 330mW
Complementary part number ZXTP5401FL
Description
A high voltage NPN transistor in a small outline surface mount package.
Features
•160V rating
• SOT23 package
Applications
• High voltage amplification
Ordering information
Device marking
N51
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTN5551FLTA 7 8 3000
C
E
B
C
E
B
Pinout - top view
ZXTN5551FL
Issue 1 - August 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
180 V
Collector-emitter voltage V
CEO
160 V
Emitter-base voltage V
EBO
6V
Continuous collector current
(a)
I
C
600 mA
Power dissipation at T
amb
=25°C
(a)
P
D
330 mW
Linear derating factor 2.64 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a)
R
⍜JA
379 °C/W
ZXTN5551FL
Issue 1 - August 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
CBO
180 270 V I
C
= 100␮A
Collector-emitter
breakdown voltage (base
open)
BV
CEO
160 200 V
I
C
= 1mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Emitter-base breakdown
voltage
BV
EBO
67.85 VI
E
= 10␮A
Collector cut-off current I
CBO
<1 50 nA V
CB
= 120V
50 ␮AV
CB
= 120V, T
amb
= 100°C
Collector-emitter saturation
voltage
V
CE(sat)
65 150 V
I
C
= 10mA, I
B
= 1mA
(*)
115 200 V
I
C
= 50mA, I
B
= 5mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
760 1000 mV
I
C
= 10mA, I
B
= 1mA
(*)
840 1200 mV
I
C
= 50mA, I
B
= 5mA
(*)
Static forward current
transfer ratio
h
FE
80 135
I
C
= 1mA, V
CE
= 5V
(*)
80 145 250
I
C
= 10mA, V
CE
= 5V
(*)
30 65
I
C
= 50mA, V
CE
= 5V
(*)
Transition frequency f
T
130 MHz I
C
= 10mA, V
CE
= 10V,
f
= 100MHz
Output capacitance C
OBO
6pF
V
CB
= 10V, f
= 1MHz
(*)
Small signal h
FE
50 260 I
C
= 10mA, V
CE
= 10V,
f=1kHz
(†)
(†) Periodic sample test only
Delay time t
(d)
95 ns V
CC
= 10V, I
C
= 10mA, I
B1
=
I
B2
= 1mA
Rise time t
(r)
64 ns
Storage time t
(s)
1256 ns
Fall time t
(f)
140 ns
P1-P3P4-P6P7-P8

ZXTN5551FLTA

Mfr. #:
Buy ZXTN5551FLTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 160V 0.6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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