SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
*High V
CEO
350V
* Low saturation voltage
COMPLEMENTARY TYPE BSP16
PARTMARKING DETAIL BSP19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
350 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
0.5 A
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
350 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
20 nA V
CB
=300V
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=50mA, I
B
=4mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.3 V I
C
=50mA, I
B
=4mA*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=20mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Transition Frequency f
T
70 MHz I
C
=10mA, V
CE
=10V
f = 20MHz
Output Capacitance C
obo
10 pF V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT658 datasheet.
BSP19
C
C
E
B
3 - 60
