LTC2050/LTC2050HV
4
2050fc
ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS
C, I SUFFIXES H SUFFIX
UNITSMIN TYP MAX MIN TYP MAX
Input Offset Voltage (Note 2) ±0.5 ±3 ±0.5 ±3 μV
Average Input Offset Drift (Note 2)
l
±0.03 ±0.05 μV/°C
Long-Term Offset Drift 50 50 nV/√mo
Input Bias Current LTC2050
l
±20 ±75
±300
±20 ±75
±4000
pA
pA
LTC2050HV
l
±1 ±50
±100
±1 ±50
±4000
pA
pA
Input Offset Current LTC2050
l
±150
±200
±150
±1000
pA
pA
LTC2050HV
l
±100
±150
±100
±1000
pA
pA
Input Noise Voltage R
S
= 100Ω, 0.01Hz to 10Hz 1.5 1.5 μV
P-P
Input Capacitance 1.7 1.7 pF
Common Mode Rejection Ratio V
CM
= GND to (V
+
– 1.3)
V
CM
= GND to (V
+
– 1.3)
l
115
110
130
130
115
110
130
130
dB
dB
Power Supply Rejection Ratio V
S
= 2.7V to 6V
l
120
115
130
130
120
115
130
130
dB
dB
Large-Signal Voltage Gain R
L
= 10k
l
120
115
140
140
120
115
140
140
dB
dB
Output Voltage Swing High R
L
= 2k to GND
R
L
= 10k to GND
l
l
2.85
2.95
2.94
2.98
2.85
2.95
2.94
2.98
V
V
Output Voltage Swing Low R
L
= 2k to GND
R
L
= 10k to GND
l
l
1
1
10
10
1
1
10
10
mV
mV
Slew Rate 22V/μs
Gain Bandwidth Product 3 3 MHz
Supply Current V
SHDN
= V
IH
, No Load
V
SHDN
= V
IL
l
l
0.75 1.1
10
0.75 1.2
10
mA
μA
Shutdown Pin Input Low Voltage (V
IL
)
l
V
+ 0.5 V
+ 0.5 V
Shutdown Pin Input High Voltage (V
IH
)
l
V
+
– 0.5 V
+
– 0.5 V
Shutdown Pin Input Current V
SHDN
= GND
l
0.5 –3 0.5 –3 μA
Internal Sampling Frequency 7.5 7.5 kHz
(LTC2050/LTC2050HV) The l denotes the specifi cations which apply over
the full operating temperature range, otherwise specifi cations are at T
A
= 25°C. V
S
= 3V unless otherwise noted. (Note 3)
LTC2050/LTC2050HV
5
2050fc
PARAMETER CONDITIONS
C, I SUFFIXES H SUFFIX
UNITSMIN TYP MAX MIN TYP MAX
Input Offset Voltage (Note 2) ±0.5 ±3 ±0.5 ±3 μV
Average Input Offset Drift (Note 2)
l
±0.03 ±0.05 μV/°C
Long-Term Offset Drift 50 50 nV/√mo
Input Bias Current LTC2050
l
±75 ±150
±300
±75 ±150
±4000
pA
pA
LTC2050HV
l
±7 ±50
±150
±7 ±50
±4000
pA
pA
Input Offset Current LTC2050
l
±300
±400
±300
±1000
pA
pA
LTC2050HV
l
±100
±200
±100
±1000
pA
pA
Input Noise Voltage R
S
= 100Ω, 0.01Hz to 10Hz 1.5 1.5 μV
P-P
Common Mode Rejection Ratio V
CM
= GND to (V
+
– 1.3)
V
CM
= GND to (V
+
– 1.3)
l
120
115
130
130
120
110
130
130
dB
dB
Power Supply Rejection Ratio V
S
= 2.7V to 6V
l
120
115
130
130
120
115
130
130
dB
dB
Large-Signal Voltage Gain R
L
= 10k
l
125
120
140
140
125
115
140
140
dB
dB
Output Voltage Swing High R
L
= 2k to GND
R
L
= 10k to GND
l
l
4.85
4.95
4.94
4.98
4.85
4.95
4.94
4.98
V
V
Output Voltage Swing Low R
L
= 2k to GND
R
L
= 10k to GND
l
l
1
1
10
10
1
1
10
10
mV
mV
Slew Rate 22V/μs
Gain Bandwidth Product 3 3 MHz
Supply Current V
SHDN
= V
IH
, No Load
V
SHDN
= V
IL
l
l
0.8 1.2
15
0.8 1.3
15
mA
μA
Shutdown Pin Input Low Voltage (V
IL
)
l
V
+ 0.5 V
+ 0.5 V
Shutdown Pin Input High Voltage (V
IH
)
l
V
+
– 0.5 V
+
– 0.5 V
Shutdown Pin Input Current V
SHDN
= GND
l
0.5 –7 0.5 –7 μA
Internal Sampling Frequency 7.5 7.5 kHz
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. (LTC2050/LTC2050HV) V
S
= 5V unless otherwise noted. (Note 3)
LTC2050/LTC2050HV
6
2050fc
ELECTRICAL CHARACTERISTICS
(LTC2050HV) The l denotes the specifi cations which apply over the full
operating temperature range, otherwise specifi cations are at T
A
= 25°C. V
S
= ±5V unless otherwise noted. (Note 3)
PARAMETER CONDITIONS
C, I SUFFIXES H SUFFIX
UNITSMIN TYP MAX MIN TYP MAX
Input Offset Voltage (Note 2) ±0.5 ±3 ±0.5 ±3 μV
Average Input Offset Drift (Note 2)
l
±0.03 ±0.05 μV/°C
Long-Term Offset Drift 50 50 nV/√mo
Input Bias Current (Note 4)
l
±25 ±125
±300
±25 ±125
±4000
pA
pA
Input Offset Current (Note 4)
l
±250
±500
±250
±1000
pA
pA
Input Noise Voltage R
S
= 100Ω, 0.01Hz to 10Hz 1.5 1.5 μV
P-P
Common Mode Rejection Ratio V
CM
= V
to (V
+
– 1.3)
V
CM
= V
to (V
+
– 1.3)
l
120
115
130
130
120
115
130
130
dB
dB
Power Supply Rejection Ratio V
S
= 2.7V to 11V
l
120
115
130
130
120
115
130
130
dB
dB
Large-Signal Voltage Gain R
L
= 10k 125
120
140
140
125
120
140
140
dB
dB
Maximum Output Voltage Swing R
L
= 2k to GND
R
L
= 10k to GND
l
l
±4.75
±4.90
±4.94
±4.98
±4.50
±4.85
±4.94
±4.98
V
V
Slew Rate 2 2 V/μs
Gain Bandwidth Product 3 3 MHz
Supply Current V
SHDN
= V
IH
, No Load
V
SHDN
= V
IL
l
l
1 1.5
25
1 1.6
25
mA
μA
Shutdown Pin Input Low Voltage (V
IL
)
l
V
+ 0.5 V
+ 0.5 V
Shutdown Pin Input High Voltage (V
IH
)
l
V
+
– 0.5 V
+
– 0.5 V
Shutdown Pin Input Current V
SHDN
= V
l
–3 –20 –3 –20 μA
Internal Sampling Frequency 7.5 7.5 kHz
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: These parameters are guaranteed by design. Thermocouple effects
preclude measurements of these voltage levels during automated testing.
Note 3: All versions of the LTC2050 are designed, characterized and
expected to meet the extended temperature limits of –40°C and 125°C.
The LTC2050C/LTC2050HVC are guaranteed to meet the temperature limits
of 0°C and 70°C. The LTC2050I/LTC2050HVI are guaranteed to meet the
temperature limits of –40°C and 85°C. The LTC2050H/LTC2050HVH are
guaranteed to meet the temperature limits of –40°C and 125°C.
Note 4: The bias current measurement accuracy depends on the proximity
of the supply bypass capacitor to the device under test, especially at ±5V
supplies. Because of testing limitations on the placement of this bypass
capacitor, the bias current at ±5V supplies is guaranteed by design to meet
the data sheet limits, but tested to relaxed limits.

LTC2050CS8#TRPBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Precision Amplifiers Zero-Drift Op Amps in SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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