APT40M70JVFR Datasheet APT40M70JVFR | P1-P3

050-5893 Rev A 2-2005

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

G

D

S

APT40M70JVFR

400V 53A 0.070

::

:

SOT-227

G

S

D

ISOTOP

®

"UL Recognized"

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250μA)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 26.5A)

Zero Gate Voltage Drain Current (V

DS

= 400V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 320V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

MIN TYP MAX

400

0.07

250

1000

±100

24

APT40M70JVFR

400

53

212

±30

±40

450

3.6

-55 to 150

300

53

50

2500

POWER MOS V

®

FREDFET

Power MOS V

®

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • Avalanche Energy Rated

• Lower Leakage •

• Popular SOT-227 Package

FAST RECOVERY BODY DIODE

DYNAMIC CHARACTERISTICS APT40M70JVFR

050-5893 Rev A 2-2005

Z

T

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

TJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D

[Cont.])

Peak Diode Recovery

dv

/

dt

5

Reverse Recovery Time

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/μs)

Reverse Recovery Charge

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/μs)

Peak Recovery Current

(I

S

= -I

D

[Cont.],

di

/

dt

= 100A/μs)

Symbol

I

S

I

SM

V

SD

dv

/

dt

t

rr

Q

rr

I

RRM

UNIT

Amps

Volts

V/ns

ns

μC

Amps

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

R

G

= 0.6:

MIN TYP MAX

7410 8890

1140 1600

450 675

330 495

40 60

127 190

16 32

54 80

510

UNIT

pF

nC

ns

MIN TYP MAX

53

212

1.3

15

T

j

= 25°C 250

T

j

= 125°C 500

T

j

= 25°C 1.6

T

j

= 125°C 5.5

T

j

= 25°C 15

T

j

= 125°C 27

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R

TJC

R

TJA

V

Isolation

Torque

MIN TYP MAX

0.28

40

2500

10

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T

j

= +25°C, L = 1.78mH, R

G

=25:, Peak I

L

= 53A

5

dv

/

dt

numbers reflect the limitations of the test circuit rather than the

device itself.

I

S

d -I

D

53A

di

/

dt

d700A/μs V

R

d100V T

J

d150°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 50 100 150 200 0 2 4 6 8

0 2 4 6 8 0 40 80 120 160 200

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT40M70JVFR

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

100

80

60

40

20

0

1.8

1.6

1.4

1.2

1.0

0.8

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100

80

60

40

20

0

100

80

60

40

20

0

60

50

40

30

20

10

0

2.5

2.0

1.5

1.0

0.5

0.0

050-5893 Rev A 2-2005

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

5V

4.5V

4V

V

GS

=6V, 7V, 10V & 15V

V

GS

=15V

V

GS

=10V

V

GS

=20V

T

J

= +25°C

T

J

= -55°C

T

J

= +125°C

T

J

= +125°C

T

J

= +25°C

T

J

= -55°C

V

GS

=6V & 7V

5.5V

5V

4.5V

4V

5.5V

V

GS

=10V

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

APT40M70JVFR

APT40M70JVFR

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