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SIS322DNT-T1-GE3

P1-P3P4-P6P7-P8
Vishay Siliconix
SiS322DNT
New Product
Document Number: 63569
S12-2185-Rev. A, 10-Sep-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV Power MOSFET
•100 % R
g
and UIS Tested
• Thin 0.75 mm height
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switch Mode Power Supplies
• Personal Computers and Servers
• Telecom Bricks
• VRM’s and POL
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257
). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
C
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() (Max.) I
D
(A)
f
Q
g
(Typ.)
30
0.0075 at V
GS
= 10 V 38.3
6.9 nC
0.0120 at V
GS
= 4.5 V 30.2
Ordering Information:
SiS322DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
Thin PowerPAK
®
1212-8
Bottom View
0.75 mm
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
+ 20, - 16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
38.3
A
T
C
= 70 °C
30.6
T
A
= 25 °C
15.3
a, b
T
A
= 70 °C
12.1
a, b
Pulsed Drain Current (t = 300 µs)
I
DM
70
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
18
T
A
= 25 °C
2.9
a, b
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy
E
AS
5
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
19.8
W
T
C
= 70 °C
12.7
T
A
= 25 °C
3.2
a, b
T
A
= 70 °C
3
a, b
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
c, d
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, e
t 10 s R
thJA
31 39
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
56.3
www.vishay.com
2
Document Number: 63569
S12-2185-Rev. A, 10-Sep-12
Vishay Siliconix
SiS322DNT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30 V
V
DS
Temperature Coefficient
V
DS
/T
J
I
D
= 250 µA
18.5
mV/°C
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
- 5.2
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.2 2.4 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= + 20 V, - 16 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
10 V, I
D
= 10 A
0.0060 0.0075
V
GS
4.5 V, I
D
= 8 A
0.0096 0.0120
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10 A
54 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1000
pFOutput Capacitance
C
oss
287
Reverse Transfer Capacitance
C
rss
34
C
rss
/C
iss
Ratio 0.034 0.068
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
14.3 21.5
nCV
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
6.9 10.5
Gate-Source Charge
Q
gs
2.8
Gate-Drain Charge
Q
gd
1.6
Output Charge
Q
oss
V
DS
= 15 V, V
GS
= 0 V
7.8
Gate Resistance
R
g
f = 1 MHz 0.4 1.6 3.2
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
15 30
ns
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
15 30
Fall Time
t
f
714
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
11 22
Rise Time
t
r
918
Turn-Off Delay Time
t
d(off)
15 30
Fall Time
t
f
510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
18
A
Pulse Diode Forward Current
I
SM
70
Body Diode Voltage
V
SD
I
S
= 5 A, V
GS
0 V
0.77 1.1 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
19 35 ns
Body Diode Reverse Recovery Charge
Q
rr
714nC
Reverse Recovery Fall Time
t
a
10
ns
Reverse Recovery Rise Time
t
b
9
Document Number: 63569
S12-2185-Rev. A, 10-Sep-12
www.vishay.com
3
Vishay Siliconix
SiS322DNT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
14
28
42
56
70
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 3 V
V
GS
= 10 V thru 4V
V
GS
= 2 V
0.000
0.004
0.008
0.012
0.016
0.020
0 14 28 42 56 70
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 3 6 9 12 15
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 15 V
V
DS
= 20 V
V
DS
= 10 V
I
D
= 10 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
11
22
33
44
55
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0.7
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 10 A
V
GS
= 10 V
V
GS
= 4.5 V
P1-P3P4-P6P7-P8

SIS322DNT-T1-GE3

Mfr. #:
Buy SIS322DNT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
Lifecycle:
New from this manufacturer.
Delivery:
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