REV. D
AD745
–6–
INPUT OFFSET VOLTAGE DRIFT V/C
NUMBER OF UNITS
72
15 10 15
50 510
66
60
54
48
42
36
30
24
18
12
6
0
TOTAL UNITS = 760
TPC 19. Distribution of Offset
Voltage Drift. T
A
= 25
°
C to 125
°
C
TPC 22a. Gain of 5 Follower,
16-Lead Package Pinout
TPC 23a. Gain of 4 Inverter,
16-Lead Package Pinout
INPUT VOLTAGE NOISE @ 10kHz nV Hz
NUMBER OF UNITS
648
2.6 2.7 3.2
2.8 2.9 3.0 3.1
594
540
486
432
378
324
270
216
162
108
54
0
TOTAL UNITS = 4100
3.3 3.4
TPC 20. Typical Input Noise Voltage
Distribution @ 10 kHz
2µs
5V
100
90
10
0%
TPC 22b. Gain of 5 Follower
Large Signal Pulse Response
2µs
5V
100
90
10
0%
TPC 23b. Gain of 4 Inverter Large
Signal Pulse Response
TPC 21. Offset Null Configuration,
16-Lead Package Pinout
500ns
50mV
100
90
10
0%
TPC 22c. Gain of 5 Follower Small
Signal Pulse Response
500ns
50mV
100
90
10
0%
TPC 23c. Gain of 4 Inverter Small
Signal Pulse Response
REV. D
AD745
–7–
OP AMP PERFORMANCE JFET VERSUS BIPOLAR
The AD745 offers the low input voltage noise of an industry
standard bipolar opamp without its inherent input current
errors. This is demonstrated in Figure 3, which compares input
voltage noise vs. input source resistance of the OP37 and the
AD745 opamps. From this figure, it is clear that at high source
impedance the low current noise of the AD745 also provides
lower total noise. It is also important to note that with the AD745
this noise reduction extends all the way down to low source
impedances. The lower dc current errors of the AD745 also
reduce errors due to offset and drift at high source impedances
(Figure 4).
The internal compensation of the AD745 is optimized for higher
gains, providing a much higher bandwidth and a faster slew
rate. This makes the AD745 especially useful as a preamplifier,
where low-level signals require an amplifier that provides both
high amplification and wide bandwidth at these higher gains.
SOURCE RESISTANCE
1000
100
INPUT NOISE VOLTAGE nV/ Hz
100
10
1
1k 10k 100k 1M 10M
R
SOURCE
R
SOURCE
E
O
OP37 AND
RESISTOR
AD745 AND
RESISTOR
AD745 AND RESISTOR
OR
OP37 AND RESISTOR
RESISTOR NOISE ONLY
Figure 3. Total Input Noise Spectral Density @ 1 kHz
vs. Source Resistance
SOURCE RESISTANCE
100
10
0.1
100 10M1k
INPUT OFFSET VOLTAGE mV
10k 100k 1M
1.0
OP37G
AD745 KN
Figure 4. Input Offset Voltage vs. Source Resistance
DESIGNING CIRCUITS FOR LOW NOISE
An opamp’s input voltage noise performance is typically divided
into two regions: flatband and low frequency noise. The AD745
offers excellent performance with respect to both. The figure of
2.9 nV/Hz @ 10 kHz is excellent for a JFET input amplifier.
The 0.1 Hz to 10 Hz noise is typically 0.38 µV p-p. The user
should pay careful attention to several design details to optimize
low frequency noise performance. Random air currents can
generate varying thermocouple voltages that appear as low
frequency noise. Therefore, sensitive circuitry should be well
shielded from air flow. Keeping absolute chip temperature low
also reduces low frequency noise in two ways: first, the low
frequency noise is strongly dependent on the ambient tempera-
ture and increases above 25°C. Second, since the gradient of
temperature from the IC package to ambient is greater, the
noise generated by random air currents, as previously mentioned,
will be larger in magnitude. Chip temperature can be reduced
both by operation at reduced supply voltages and by the use of a
suitable clip-on heat sink, if possible.
Low frequency current noise can be computed from the
magnitude of the dc bias current
~
I
n
= 2qI
B
f
and increases below approximately 100 Hz with a 1/f power
spectral density. For the AD745 the typical value of current
noise is 6.9 fA/
Hz at 1 kHz. Using the formula:
I
~
n
= 4kT /Rf
to compute the Johnson noise of a resistor, expressed as a
current, one can see that the current noise of the AD745 is
equivalent to that of a 3.45 × 10
8
source resistance.
At high frequencies, the current noise of a FET increases pro-
portionately to frequency. This noise is due to the real part of
the gate input impedance, which decreases with frequency. This
noise component usually is not important, since the voltage
noise of the amplifier impressed upon its input capacitance is an
apparent current noise of approximately the same magnitude.
In any FET input amplifier, the current noise of the internal
bias circuitry can be coupled externally via the gate-to-source
capacitances and appears as input current noise. This noise is
totally correlated at the inputs, so source impedance matching
will tend to cancel out its effect. Both input resistance and input
capacitance should be balanced whenever dealing with source
capacitances of less than 300 pF in value.
LOW NOISE CHARGE AMPLIFIERS
As stated, the AD745 provides both low voltage and low current
noise. This combination makes this device particularly suitable
in applications requiring very high charge sensitivity, such as
capacitive accelerometers and hydrophones. When dealing with
a high source capacitance, it is useful to consider the total input
charge uncertainty as a measure of system noise.
Charge (Q) is related to voltage and current by the simply stated
fundamental relationships:
Q = CV and I =
dQ
dt
As shown, voltage, current and charge noise can all be directly
related. The change in open circuit voltage (V) on a capacitor
will equal the combination of the change in charge (Q/C) and
the change in capacitance with a built-in charge (Q/C).
REV. D
AD745
–8–
Figures 5 and 6 show two ways to buffer and amplify the output
of a charge output transducer. Both require the use of an ampli-
fier that has a very high input impedance, such as the AD745.
Figure 5 shows a model of a charge amplifier circuit. Here,
amplification depends on the principle of conservation of charge
at the input of amplifier A1, which requires that the charge on
capacitor C
S
be transferred to capacitor C
F
, thus yielding an
output voltage of Q/C
F
. The amplifiers input voltage noise will
appear at the output amplified by the noise gain (1 + (C
S
/C
F
))
of the circuit.
A1
C
B
* R
B
*
C
S
R2
R1
R
S
C
F
R1
R2
C
S
C
F
=
Figure 5. A Charge Amplifier Circuit
R
B
C
S
A2
C
B
*
R1
R2
R
B
*
*OPTIONAL, SEE TEXT.
Figure 6. Model for A High Z Follower with Gain
The second circuit, Figure 6, is simply a high impedance fol-
lower with gain. Here the noise gain (1 + (R1/R2)) is the same
as the gain from the transducer to the output. Resistor R
B
, in
both circuits, is required as a dc bias current return.
There are three important sources of noise in these circuits.
Amplifiers A1 and A2 contribute both voltage and current noise,
while resistor R
B
contributes a current noise of:
~
N
k
T
R
f
B
= 4
where:
k = Boltzmans Constant = 1.381 × 10
23
Joules/Kelvin
T = Absolute Temperature, Kelvin (0°C = 273.2 Kelvin)
f = Bandwidth in Hz (Assuming an Ideal Brick Wall
Filter)
This must be root-sum-squared with the amplifiers own current
noise.
Figure 5 shows that these two circuits have an identical frequency
response and the same noise performance (provided that
C
S
/C
F
= R1/ R2). One feature of the first circuit is that a T
network is used to increase the effective resistance of R
B
and
improve the low frequency cutoff point by the same factor.
FREQUENCY Hz
100
0.01
DECIBELS REFERENCED TO 1V/ Hz
110
120
130
140
150
160
170
180
190
200
210
220
0.1 1 10 100 1k 10k 100k
TOTAL
OUTPUT
NOISE
NOISE DUE TO
R
B
ALONE
NOISE DUE TO
I
B
ALONE
Figure 7. Noise at the Outputs of the Circuits of Figures 5
and 6. Gain = 10, C
S
= 3000 pF, R
B
= 22 M
However, this does not change the noise contribution of R
B
which, in this example, dominates at low frequencies. The graph
of Figure 8 shows how to select an R
B
large enough to minimize
this resistors contribution to overall circuit noise. When the
equivalent current noise of R
B
((4 kT)/R) equals the noise of
I
B
2qI
B
()
, there is diminishing return in making R
B
larger.
INPUT BIAS CURRENT
5.2 10
10
1pA 10nA10pA
RESISTANCE IN
100pA 1nA
5.2 10
9
5.2 10
8
5.2 10
7
5.2 10
6
Figure 8. Graph of Resistance vs. Input Bias Current
Where the Equivalent Noise
4 kT/R
, Equals the Noise
of the Bias Current
I
B
2qI
B
()
To maximize dc performance over temperature, the source
resistances should be balanced on each input of the amplifier.
This is represented by the optional resistor R
B
in Figures 5 and 6.
As previously mentioned, for best noise performance care should
be taken to also balance the source capacitance designated by
C
B
The value for C
B
in Figure 5 would be equal to C
S
in
Figure 6. At values of C
B
over 300 pF, there is a diminishing
impact on noise; capacitor C
B
can then be simply a large mylar
bypass capacitor of 0.01 µF or greater.

AD745JRZ-16-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers Ultra Low Noise Hi Spd BiFET
Lifecycle:
New from this manufacturer.
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