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MRFG35003M6R5

P1-P3P4-P6P7-P9P10-P12
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
Replaced by MRFG35003N6T1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRFG35003M6T1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W -CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
I
DQ
= 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
8 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
22.7
(2)
0.15
(2)
W
W/°C
Gate- Source Voltage V
GS
-5 Vdc
RF Input Power P
in
24 dBm
Storage Temperature Range T
stg
-65 to +150 °C
Channel Temperature
(1)
T
ch
175 °C
Operating Case Temperature Range T
C
-20 to +85 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
6.6
(2)
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J- STD-020 1 260 °C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Document Number: MRFG35003M6T1
Rev. 4, 1/2006
Freescale Semiconductor
Technical Data
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
MRFG35003M6T1
CASE 466- 03, STYLE 1
PLD-1.5
PLASTIC
Freescale Semiconductor, Inc., 2006. All rights reserved.
AR
C
HIVE INF
O
RMATI
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ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRFG35003M6T1
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
I
DSS
— 2.9 — Adc
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
I
GSS
— < 1.0 100 µAdc
Off State Drain Current
(V
DS
= 6 Vdc, V
GS
= - 1.9 Vdc)
I
DSO
— 0.02 1.0 mAdc
Off State Current
(V
DS
= 20 Vdc, V
GS
= - 2.5 Vdc)
I
DSX
— 1.0 15 mAdc
Gate- Source Cut-off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
V
GS(th)
-1.2 -1.0 -0.7 Vdc
Quiescent Gate Voltage
(V
DS
= 6 Vdc, I
DQ
= 180 mA)
V
GS(Q)
-1.1 -0.9 -0.7 Vdc
Power Gain
(V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
G
ps
8 9 — dB
Output Power, 1 dB Compression Point
(V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
P1dB — 3 — W
Drain Efficiency
(V
DD
= 6 Vdc, I
DQ
= 180 mA, P
out
= 450 mW, f = 3.55 GHz.
Tune for Maximum P
out
)
h
D
22 24 — %
Adjacent Channel Power Ratio
(V
DD
= 6 Vdc, P
out
= 450 mW Avg., I
DQ
= 180 mA,
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR — -42 -38 dBc
AR
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HIVE INF
O
RMATI
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N
ARCHIVE INFORMATION
MRFG35003M6T1
3
RF Device Data
Freescale Semiconductor
Z8 0.439″ x 0.136″ Microstrip
Z9 0.062″ x 0.280″ Microstrip
Z11 0.349″ x 0.302″ Microstrip
Z12 0.055″ x 0.130″ Microstrip
Z13 0.044″ x 0.502″ Microstrip
PCB Rogers 4350, 0.020″, ε
r
= 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Z1, Z14 0.044″ x 0.125″ Microstrip
Z2 0.440″ x 0.105″ Microstrip
Z3 0.340″ x 0.357″ Microstrip
Z4 0.380″ x 0.426″ Microstrip
Z5, Z10 0.527″ x 0.015″ Microstrip
Z6 0.027″ x 0.347″ Microstrip
Z7 0.538″ x 0.115″ Microstrip
C11
RF
INPUT
RF
OUTPUT
R1
C10 C9 C8 C7 C6 C5
C16 C17 C18 C19 C20 C21 C22
C3 C4 C14 C15
Z5 Z10
C2 C12 C13 C23
C25C26C27C28
C1 C24
Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 Z11 Z12 Z13 Z14
V
DD
=6.0
V
GS
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Designation Description
C1 12 pF Chip Capacitor, ATC
C2 0.1 pF Chip Capacitor (0805), AVX
C3, C4, C14, C15 3.9 pF Chip Capacitors (0805), AVX
C5, C16 10 pF Chip Capacitors, ATC
C6, C17 100 pF Chip Capacitors, ATC
C7, C18 100 pF Chip Capacitors, ATC
C8, C19 1000 pF Chip Capacitors, ATC
C9, C20 3.9 µF Chip Capacitors, ATC
C10, C21 0.1 µF Chip Capacitors, ATC
C11, C22 22 µF, 35 V Tantalum Surface Mount Capacitor, Newark
C12, C13, C26, C27 0.3 pF Chip Capacitors (0805), AVX
C23, C25, C28 1.0 pF Chip Capacitors (0805), AVX
C24 7.5 pF Chip Capacitor, ATC
R1
50 W Chip Resistor, Newark
P1-P3P4-P6P7-P9P10-P12

MRFG35003M6R5

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Buy MRFG35003M6R5
Manufacturer:
NXP Semiconductors
Description:
FET RF 8V 3.55GHZ 1.5-PLD
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