©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
KSP8098/8099
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSP8098
: KSP8099
60
80
V
V
V
CEO
Collector-Emitter Voltage
: KSP8098
: KSP8099
60
80
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP8098
: KSP8099
I
C
=100µA, I
E
=0
60
80
V
V
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP8098
: KSP8099
I
C
=10mA, I
B
=0
60
80
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current
: KSP8098
: KSP8099
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
100
100
nA
nA
I
CEO
Collector Cut-off Current V
CE
=60V, I
B
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=6V, I
C
=0 100 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
100
100
75
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=10mA
0.4
0.3
V
V
V
BE
(on) * Base-Emitter On Voltage
: KSP8098
: KSP8099
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
0.5
0.6
0.7
0.8
V
V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA
f=100MHz
150 MHz
C
ob
Output Capacitance V
CB
=5V, I
E
=0
f=1MHz
6pF
KSP8098/8099
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= KSP8098: 60V
KSP8099: 80V
• Collector Power Dissipation: P
C
(max)=625mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
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