KSE700STU

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001

KSE700/701/702/703

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

Sym-

bol

Parameter Value

Unit

s

V

CBO

Collector- Base Voltage : KSE700/701

: KSE702/703

- 60

- 80

V

V

V

CEO

Collector-Emitter Voltage : KSE700/701

: KSE702/703

- 60

- 80

V

V

V

EBO

Emitter- Base Voltage - 5 V

I

C

Collector Current - 4 A

I

B

Base Current - 0.1 A

P

C

Collector Dissipation (T

C

=25°C) 40 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage

: KSE700/701

: KSE702/703

I

C

= - 10mA, I

B

= 0 -60

-80

V

V

I

CEO

Collector Cut-off Current

: KSE700/701

: KSE702/703

V

CE

= - 60V, I

B

= 0

V

CE

= - 80V, I

B

= 0

-100

-100

µA

µA

I

CBO

Collector Cut-off Current V

CB

= Rated BV

CEO

, I

E

= 0

V

CB

= Rated BV

CEO

, I

E

= 0

@T

C

= 100°C

-100

-500

µA

µA

I

EBO

Emitter Cut-off Current V

BE

= - 5V, I

C

= 0 -2 mA

h

FE

DC Current Gain

: KSE700/702

: KSE701/703

: ALL DEVICES

V

CE

= - 3V, I

C

= - 1.5A

V

CE

= - 3V, I

C

= - 2A

V

CE

= - 3V, I

C

= - 4A

750

750

100

V

CE

(sat) Collector-Emitter Saturation Voltage

: KSE700/702

: KSE701/703

: ALL DEVICES

I

C

= - 1.5A, I

B

= - 30mA

I

C

= - 2A, I

B

= - 40mA

I

C

= - 4A, I

B

= - 40mA

-2.5

-2.8

-3

V

V

V

V

BE

(on) Base-Emitter On Voltage

: KSE700/702

: KSE701/703

: ALL DEVICES

V

CE

= - 3V, I

C

= - 1.5A

V

CE

= - 3V, I

C

= - 2A

V

CE

= - 3V, I

C

= - 4A

-1.2

-2.5

-3

V

V

V

KSE700/701/702/703

Monolithic Construction With Built-in Base-

Emitter Resistors

• High DC Current Gain : h

FE

= 750 (Min.) @ I

C

= -1.5 and -2.0A DC

• Complement to KSE800/801/802/803

R

110

k

Ω≅

R

20.6

k

Ω≅

Equivalent Circuit

B

E

C

R1

R2

1

TO-126

1. Emitter 2.Collector 3.Base

©2001 Fairchild Semiconductor Corporation

KSE700/701/702/703

Rev. A2, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

-0 -1 -2 -3 -4 -5

-0

-1

-2

-3

-4

-5

I

B

= -400

µ

s

I

B

= -1000µs

I

B

= -900µs

I

B

= -800µs

I

B

= -700µs

I

B

= -600µs

I

B

= -500µs

I

B

= -300

µ

s

I

B

= -200

µ

s

I

B

= -100µs

I

C

[A],COLLECTOR CURRENT

V

CE

(V),COLLECTOR-EMITTER VOLTAGE

-0.01 -0.1 -1 -10

10

100

1k

10k

V

CE

= -3V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

-0.01 -0.1 -1 -10

-0.1

-1

-10

-100

I

C

= 500 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

-0.01 -0.1 -1 -10 -100

1

10

100

1000

f=0.1MHZ

I

E

=0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

-1 -10 -100 -1000

-0.1

-1

-10

-100

MJE702/703

D.C.

5ms

1ms

MJE700/701

100

µ

s

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

10

20

30

40

50

60

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001

KSE700/701/702/703

Dimensions in Millimeters

3.25

±0.20

8.00

±0.30

ø3.20

±0.10

0.75

±0.10

#1

0.75

±0.10

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

1.60

±0.10

11.00

±0.20

3.90

±0.10

14.20MAX

16.10

±0.20

13.06

±0.30

1.75

±0.20

(0.50)

(1.00)

0.50

+0.10

–0.05

TO-126

KSE700STU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Darlington Transistors PNP Epitaxial Sil Darl

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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