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NGB8204NT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1 Publication Order Number:
NGB8204N/D
NGB8204N
Ignition IGBT
18 Amps, 400 Volts
N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (R
GE
)
• Emitter Ballasting for Short−Circuit Capability
• Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
430 V
DC
Collector−Gate Voltage V
CER
430 V
DC
Gate−Emitter Voltage V
GE
18 V
DC
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
18
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 W, C = 200 pF
ESD 800 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
115
0.77
W
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
18 AMPS, 400 VOLTS
V
CE(on)
3 2.0 V @
I
C
= 10 A, V
GE
. 4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device Package Shipping
†
ORDERING INFORMATION
NGB8204NT4 D
2
PAK 800 / Tape & Reel
MARKING DIAGRAM
GB
8204NG
AYWW
1
Gate
3
Emitter
4
Collector
2
Collector
GB8204N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
R
GE
http://onsemi.com
1
NGB8204NT4G D
2
PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NGB8204N
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T
J
≤ 175°C)
Characteristic
Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 21.1 A, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 18.3 A, L = 1.8 mH, Starting T
J
= 125°C
E
AS
400
300
mJ
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
E
AS(R)
2000
mJ
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ T
J
≤ 150°C)
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
t
sc1
750
ms
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) t
sc2
5.0 ms
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.3 °C/W
Thermal Resistance, Junction−to−Ambient D
2
PAK (Note 1)
R
q
JA
50 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) T
L
275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BV
CES
I
C
= 2.0 mA
T
J
= −40°C to 150°C 380 395 420 V
DC
I
C
= 10 mA T
J
= −40°C to 150°C 390 405 430
Zero Gate Voltage Collector Current I
CES
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 25°C − 2.0 10 mA
DC
T
J
= 150°C − 10 40*
T
J
= −40°C − 1.0 10
Reverse Collector−Emitter Leakage
Current
I
ECS
V
CE
= −24 V
T
J
= 25°C − 0.7 1.0
mA
T
J
= 150°C − 12 25*
T
J
= −40°C − 0.1 1.0
Reverse Collector−Emitter Clamp
Voltage
B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 27 33 37
V
DC
T
J
= 150°C 30 36 40
T
J
= −40°C 25 32 35
Gate−Emitter Clamp Voltage BV
GES
I
G
= 5.0 mA T
J
= −40°C to 150°C 11 13 15 V
DC
Gate−Emitter Leakage Current I
GES
V
GE
= 10 V T
J
= −40°C to 150°C 384 640 700
mA
DC
Gate Emitter Resistor R
GE
− T
J
= −40°C to 150°C 10 16 26
k
W
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C 1.1 1.4 1.9
V
DC
T
J
= 150°C 0.75 1.0 1.4
T
J
= −40°C 1.2 1.6 2.1*
Threshold Temperature Coefficient
(Negative)
− − − − 3.4 − mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
NGB8204N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.0 1.4 1.6
V
DC
T
J
= 150°C 0.9 1.3 1.6
T
J
= −40°C 1.1 1.45 1.7*
I
C
= 8.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.3 1.6 1.9*
T
J
= 150°C 1.2 1.55 1.8
T
J
= −40°C 1.4 1.6 1.9*
I
C
= 10 A,
V
GE
= 4.0 V
T
J
= 25°C 1.4 1.8 2.0
T
J
= 150°C 1.5 1.8 2.0
T
J
= −40°C 1.4 1.8 2.1*
I
C
= 15 A,
V
GE
= 4.0 V
T
J
= 25°C 1.8 2.2 2.5
T
J
= 150°C 2.0 2.4 2.6*
T
J
= −40°C 1.7 2.1 2.5
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 25°C 1.3 1.8 2.0*
T
J
= 150°C 1.3 1.75 2.0*
T
J
= −40°C 1.4 1.8 2.0*
Forward Transconductance gfs V
CE
= 5.0 V,
I
C
= 6.0 A
T
J
= −40°C to 150°C 8.0 14 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
= −40°C to 150°C
400 800 1000
pF
Output Capacitance C
OSS
50 75 100
Transfer Capacitance C
RSS
4.0 7.0 10
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive) t
d(off)
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46 W,
T
J
= 25°C − 4.0 10 mSec
Fall Time (Resistive) t
f
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kW, R
L
= 46 W,
T
J
= 25°C − 9.0 15
Turn−On Delay Time t
d(on)
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW,
R
L
= 1.5 W
T
J
= 25°C − 0.7 4.0 mSec
Rise Time t
r
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kW,
R
L
= 1.5 W
T
J
= 25°C − 4.5 7.0
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
P1-P3P4-P6P7-P8

NGB8204NT4

Mfr. #:
Buy NGB8204NT4
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers 18A 400V Ignition
Lifecycle:
New from this manufacturer.
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