Vishay Siliconix
Si1025X
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
www.vishay.com
1
P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• High-Side Switching
• Low On-Resistance: 4
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 23 pF (typ.)
• Miniature Package
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven Without Buffer
• Small Board Area
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid State Relays
PRODUCT SUMMARY
V
DS (min)
(V) R
DS(on)
()V
GS(th)
(V) I
D
(mA)
- 60
4 at V
GS
= - 10 V
- 1 to - 3.0 - 500
Marking Code: D
Top View
3
1
D
2
G
2
S
1
52
4
6
D
1
S
2
G
1
SC-89
Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 200 - 190
mA
T
A
= 85 °C
- 145 - 135
Pulsed Drain Current
b
I
DM
- 650
Continuous Source Current (Diode Conduction)
a
I
S
- 450 - 380
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
280 250
mW
T
A
= 85 °C
145 130
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V