AOL1418
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1.4 2.2 2.6 V
I
D(ON)
200 A
5 6
T
J
=125°C 6.7 8.1
8.3 10.5 mΩ
g
FS
60 S
V
SD
0.72 1 V
I
S
85 A
C
iss
1050 1320 1600 pF
C
oss
533 pF
C
rss
154 pF
R
g
0.95 1.5 Ω
Q
g
(10V) 26 32 nC
Q
g
(4.5V) 13.3 16.2 nC
Q
gs
3.2 nC
Q
gd
6.6 nC
t
D(on)
7.2 10 ns
t
r
12.5 18 ns
t
D(off)
22 33 ns
t
f
6 9 ns
t
rr
29.7 36
ns
Q
rr
29 36 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Total Gate Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250µA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
I: Pulse test; pulse width<=300us, duty cycle<=0.5%
* This device is guaranteed green after date code 8P11 (June 1
ST
2008)
Rev6:May 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
