2
611.7
October 12, 2005
Absolute Maximum Ratings Thermal Information
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, V
CIO
(Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
θ
JA
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . 150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications T
A
= 25
o
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
Input Offset Voltage (Figures 1, 4) V
IO
- 0.25 5.0 mV
Input Offset Current (Figure 1) I
IO
I
3
= I
9
= 2mA - 0.3 3.0 μA
Input Bias Current (Figures 1, 5) I
B
- 13.5 33 μA
Temperature Coefficient
Magnitude of Input Offset Voltage
-1.1-μV/
o
C
DC CHARACTERISTICS FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 6)
VBE V
CE
= 6V, I
C
= 1mA 674 774 874 mV
Temperature Coefficient of
Base-to-Emitter Voltage
(Figure 6)
V
CE
= 6V, I
C
= 1mA - -0.9 - mV/
o
C
Collector Cutoff Current (Figure 7) I
CBO
V
CB
= 10V, I
E
= 0 - 0.0013 100 nA
Collector-to-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, I
B
= 0 15 24 - V
Collector-to-Base Breakdown Voltage V
(BR)CBO
I
C
= 10μA, I
E
= 0 20 60 - V
Collector-to-Substrate Breakdown Voltage V
(BR)CIO
I
C
= 10μA, I
B
= I
E
= 0 20 60 - V
Emitter-to-Base Breakdown Voltage V
(BR)EBO
I
E
= 10μA, I
C
= 0 5 7 - V
DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
1/f Noise Figure (For Single Transistor)
(Figure 12)
NF f = 100kHz, R
S
= 500Ω,
I
C
= 1mA
-1.5-dB
Gain Bandwidth Product (For Single
Transistor) (Figure 11)
f
T
V
CE
= 6V, I
C
= 5mA - 1.35 - GHz
Collector-Base Capacitance (Figure 8) C
CB
I
C
= 0,
V
CB
= 5V
Note 3 - 0.28 - pF
Note 4 - 0.15 - pF
Collector-Substrate
Capacitance (Figure 8)
C
CI
I
C
= 0, V
CI
= 5V - 1.65 - pF
Common Mode Rejection Ratio CMRR I
3
= I
9
= 2mA - 100 - dB
AGC Range, One Stage (Figure 2) AGC Bias Voltage = -6V - 75 - dB
Voltage Gain, Single-Ended Output
(Figures 2, 9, 10)
A Bias Voltage = -4.2V,
f = 10MHz
18 22 - dB
ΔV
IO
ΔT
----------------
CA3102
