TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
Qualified Level
2N6676 2N6678 2N6691 2N6693
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6676
2N6691
2N6678
2N6693
Unit
Collector-Emitter Voltage
V
CEO
300 400 Vdc
Collector-Base Voltage
V
CBO
450 650 Vdc
Collector-Base Voltage
V
CEX
450 650 Vdc
Emitter-Base Voltage
V
EBO
8.0 Vdc
Base Current I
B
5.0 Adc
Collector Current
I
C
15 Adc
2N6676
2N6678
2N6691
2N6693
Total Power Dissipation @ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
P
T
6.0
(2)
175
3.0
(3)
175
W
W
Operating & Storage Junction Temperature Range
T
op;
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
1.0
0
C/W
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3) Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
2N6676, 2N6678
TO-3 (TO-204AA)*
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
Vdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc 2N6676, 2N6691
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc 2N6678, 2N6693
I
CEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
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