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V12P8HM3_A/H

P1-P3P4-P5
V12P8-M3, V12P8HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
1
Document Number: 87714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.42 V at I
F
= 6 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
12 A
V
RRM
80 V
I
FSM
200 A
V
F
at I
F
= 12 A (T
A
= 125 °C) 0.54 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variation Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2
Cathode
K
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V12P8 UNIT
Device marking code V128
Maximum repetitive peak reverse voltage V
RRM
80 V
Maximum average forward rectified current (fig. 1)
I
F
(1)
12
A
I
F
(2)
4.3
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V12P8-M3, V12P8HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
2
Document Number: 87714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(3)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 6.0 A
T
A
= 25 °C
V
F
(1)
0.49 -
V
I
F
= 12 A 0.58 0.66
I
F
= 6.0 A
T
A
= 125 °C
0.42 -
I
F
= 12 A 0.54 0.62
Reverse current V
R
= 80 V
T
A
= 25 °C
I
R
(2)
-1
mA
T
A
= 125 °C 12 30
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V12P8 UNIT
Typical thermal resistance
R
JA
(1)(2)
75
°C/W
R
JM
(3)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V12P8-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V12P8-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
V12P8HM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
V12P8HM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
V12P8HM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
V12P8HM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
0
2
4
6
8
10
12
14
0255075100125150
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
= 122 °C, R
thJM
= 4 °C/W
T
A
= 25 °C, R
thJA
= 75 °C/W
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
01234567891011121314
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V12P8-M3, V12P8HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
3
Document Number: 87714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
= 25 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
P1-P3P4-P5

V12P8HM3_A/H

Mfr. #:
Buy V12P8HM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers TMBS 80V Vrrm eSMP AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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