TK34A10N1,S4X Datasheet TK34A10N1,S4X | P1-P3

TK34A10N1

1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK34A10N1

Start of commercial production

2012-01

1.

1. Applications

Applications

• Switching Voltage Regulators

2.

2. Features

Features

(1) Low drain-source on-resistance: R

DS(ON)

= 7.9 mΩ (typ.) (V

GS

= 10 V)

(2) Low leakage current: I

DSS

= 10 µA (max) (V

DS

= 100 V)

(3) Enhancement mode: V

th

= 2.0 to 4.0 V (V

DS

= 10 V, I

D

= 0.5 mA)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

TO-220SIS

1: Gate

2: Drain

3: Source

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Channel temperature

Storage temperature

(Silicon limit)

(T

c

= 25)

(t = 1 ms)

(T

c

= 25)

(Note 1,2)

(Note 1)

(Note 3)

Symbol

V

DSS

V

GSS

I

D

I

D

I

DP

P

D

E

AS

I

AR

T

ch

T

stg

Rating

100

±20

75

34

147

35

64

34

150

-55 to 150

Unit

V

A

W

mJ

A



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2014-02-07

Rev.3.0

TK34A10N1

2

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Symbol

R

th(ch-c)

R

th(ch-a)

Max

3.57

62.5

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Limited by silicon chip capability.

Note 3: V

DD

= 80 V, T

ch

= 25 (initial), L = 42.9 µH, I

AR

= 34 A

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2014-02-07

Rev.3.0

TK34A10N1

3

6.

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

(Note 4)

Symbol

I

GSS

I

DSS

V

(BR)DSS

V

(BR)DSX

V

th

R

DS(ON)

Test Condition

V

GS

= ±20 V, V

DS

= 0 V

V

DS

= 100 V, V

GS

= 0 V

I

D

= 10 mA, V

GS

= 0 V

I

D

= 10 mA, V

GS

= -20 V

V

DS

= 10 V, I

D

= 0.5 mA

V

GS

= 10 V, I

D

= 17 A

Min



100

65

2.0



Typ.



7.9

Max

±0.1

10



4.0

9.5

Unit

µA

V

mΩ

Note 4: If a reverse bias is applied between gate and source, this device enters V

(BR)DSX

mode. Note that the drain-

source breakdown voltage is lowered in this mode.

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Gate resistance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

C

iss

C

rss

C

oss

r

g

t

r

t

on

t

f

t

off

Test Condition

V

DS

= 50 V, V

GS

= 0 V, f = 1 MHz



See Figure 6.2.1

Min



Typ.

2600

23

450

2.1

12

31

18

50

Max



Unit

pF

Ω

ns

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Gate switch charge

Symbol

Q

g

Q

gs1

Q

gd

Q

SW

Test Condition

V

DD

≈ 80 V, V

GS

= 10 V, I

D

= 34 A

Min



Typ.

38

13

9.7

15

Max



Unit

nC

2014-02-07

Rev.3.0

TK34A10N1,S4X

TK34A10N1,S4X

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