VS-6FR20M

VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
1
Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
High surge current capability
Stud cathode and stud anode version
Wide current range
Types up to 1200 V V
RRM
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Converters
Power supplies
Machine tool controls
Battery charges
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
6 A
Package DO-203AA (DO-4)
Circuit configuration Single diode
DO-203AA (DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
6A
T
C
160 °C
I
F(RMS)
9.5 A
I
FSM
50 Hz 159
A
60 Hz 167
I
2
t
50 Hz 134
A
2
s
60 Hz 141
V
RRM
Range 100 to 1200 V
T
J
-65 to +175 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
VS-6F(R)
10 100 150
12
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1200
120 1200 1400
VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
2
Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
6A
160 °C
Maximum RMS forward current I
F(RMS)
9.5 A
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
159
A
t = 8.3 ms 167
t = 10 ms
100 % V
RRM
reapplied
134
t = 8.3 ms 141
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
127
A
2
s
t = 8.3 ms 116
t = 10 ms
100 % V
RRM
reapplied
90
t = 8.3 ms 82
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 1270 A
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 0.63
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.86
Low level value of forward slope resistance r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 15.7
m
High level value of forward slope resistance r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 5.6
Maximum forward voltage drop V
FM
I
pk
= 19 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave 1.10 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to +175
°C
Maximum storage temperature range T
Stg
-65 to +200
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
K/W
Maximum thermal resistance,
case to heat sink
R
thCS
Mounting surface, smooth, flat and greased 0.5
Mounting torque, ± 10 %
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
Approximate weight
7g
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.34 0.29
T
J
= T
J
maximum K/W
120° 0.44 0.48
90° 0.57 0.63
60° 0.85 0.88
30° 1.37 1.39
VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
3
Document Number: 93519
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
155
160
165
170
175
01234567
30°
60°
90°
12
180°
Maximum Allowable Case Temperature (°C)
Conduct ion Angle
Average Forward Current (A)
6F(R) Series
R (DC) = 2.5 K/ W
thJC
155
160
165
170
175
0246810
DC
30°
60°
90°
120°
180°
Maxi mu m Allowable Case Temper ature (°C)
Conduct io n Per iod
Average Forward Current (A)
6F(R) Series
R (DC) = 2.5 K/W
thJC
0 255075100
Maximum Allowable Ambient Temperature (°C)
1
5
K
/
W
R
=
2
0
K
/
W
-
D
e
l
t
a
R
t
h
S
A
3
0
K
/
W
4
0
K
/
W
5
0
K
/
W
0
1
2
3
4
5
6
0123456
Average Forward Current (A)
RMS Limi t
Maximum Average Forward Power Loss (W)
Conduct ion Angl e
180°
120°
90°
60°
30°
6F(R) Series
T = 175°C
J
0 255075100
Maxi mum Al lowable Ambient Temperature (°C)
2
0
K
/
W
3
0
K
/
W
4
0
K/
W
5
0
K/
W
R
=
1
5
K
/
W
-
D
e
l
t
a
R
1
0
K
/
W
t
h
S
A
0
1
2
3
4
5
6
7
8
0246810
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
6F(R) Series
T = 175°C
J

VS-6FR20M

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Diodes - DO4 BRAZ SQR-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union