FDMS86568-F085 N-Channel PowerTrench
®
MOSFET
©2014 Semiconductor Components Industries, LLC.
August-2017, Rev 3
Publication Order Number:
FDMS86568-F085/D
FDMS86568-F085
N-Channel PowerTrench
®
MOSFET
60 V, 80 A, 3.5 mΩ
Features
Typical R
DS(on)
= 2.6 mΩ at V
GS
= 10V, I
D
= 80 A
Typical Q
g(tot)
= 55 nC at V
GS
= 10V, I
D
= 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings T
J
=
25°C unless otherwise noted.
Symbol Parameter Ratings Units
V
DSS
Dr
ain-to-Source Voltage 60 V
V
GS
Gate-to-Sour
ce Voltage ±20 V
I
D
Dr
ain Current - Continuous (V
GS
=1
0) (Note 1) T
C
=
25°C 80
A
Pulsed Drain Current T
C
= 25°C See Figur
e 4
E
AS
Single Pulse Av
alanche Energy (Note 2) 102 mJ
P
D
Powe
r Dissipation 214 W
Derate Above 25
o
C1.43W/
o
C
T
J
, T
STG
Operatin
g and Storage Temperature -55 to + 175
o
C
R
θJC
Therma
l Resistance, Junction to Case 0.7
o
C/W
R
θJA
Maximum The
rmal Resistance, Junction to Ambient (Note 3) 50
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86568
FDMS86568-F085
Power56 13” 12mm 3000units
Not
es:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L =
50uH, I
AS
= 64A
, V
DD
= 60V
during inductor charging and V
DD
= 0V du
ring time in avalanche.
3: R
θJA
is the sum of
the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is gu
aranteed by design, while R
θJA
is determin
ed by the board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad
of 2oz copper.
