Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Pulse test: t
p
300 μs; δ≤0.01.
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Rev. 1 — 25 October 2010 Product data sheet
BOTTOM VIEW
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
amb
=25°C--60V
V
GS
gate-source voltage T
amb
=25°C--±20 V
I
D
drain current T
amb
=25°C;
V
GS
=10V
[1]
--450mA
R
DSon
drain-source on-state
resistance
T
j
=25°C;
V
GS
=10V;
I
D
= 500 mA
[2]
-11.6Ω
2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 25 October 2010 2 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3
1
2
Transparent
top view
017aaa00
0
G
D
S
Table 3. Ordering information
Type number Package
Name Description Version
2N7002BKM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
Table 4. Marking codes
Type number Marking code
2N7002BKM Z8
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-450mA
T
amb
=100°C-220mA
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
10 μs
-1.2A

2N7002BKM,315

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET Single N-Channel 60V 300mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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