Data Sheet ADP198
Rev. G | Page 3 of 16
SPECIFICATIONS
V
IN
= 2.8 V, EN = V
IN
, I
OUT
= 200 mA, T
A
= 25°C, unless otherwise noted. T
J
= −40°C to +85°C for minimum/maximum specifications,
unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT VOLTAGE RANGE
V
IN
T
J
= −40°C to +125°C
1.65
V
EN INPUT
Threshold
High V
IH
V
IN
5 V 1.2 V
5 V < V
IN
1.3 V
Low V
IL
1.65 V V
IN
6.5 V 0.43 V
1.65 V V
IN
6.5 V, T
J
= 40°C to +125°C 0.37 V
Pull-Down Current I
EN
500 nA
REVERSE BLOCKING
V
OUT
Current V
EN
= 0, V
IN
= 0, V
OUT
= 6.5 V 7 13 µA
Hysteresis |V
IN
− V
OUT
| 75 mV
CURRENT
Quiescent Current I
Q
I
OUT
= 0 mA, includes EN pull-down current
V
IN
= V
OUT
= 2.8 V 2.5 µA
V
IN
= V
OUT
= 6.5 V 20 µA
Off State Current I
OFF
EN = GND 1.1 2 µA
EN = GND, V
OUT
= 0 V 2 µA
VIN to VOUT RESISTANCE RDS
ON
WLCSP V
IN
= 5 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 40
V
IN
= 3.3 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 50 80
V
IN
= 3.3 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, T
J
= 40°C to +125°C 50 90
V
IN
= 2.8 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 60
V
IN
= 1.8 V, I
LOAD
= 200 mA, V
EN
= 1.5 V
130
V
IN
= 1.65 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 180
LFCSP V
IN
= 5 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 75 120
V
IN
= 5 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, T
J
= 40°C to +125°C 75 130
V
IN
= 3.3 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 90
V
IN
= 2.8 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 100
V
IN
= 1.8 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 120
V
IN
= 1.65 V, I
LOAD
= 200 mA, V
EN
= 1.5 V 200
VOUT TIME
WLCSP
Turn-On Delay Time t
ON_DLY
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF, ADP198ACBZ-R7 10 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF, ADP198ACBZ-11-R7 450 μs
LFCSP
Turn-On Delay Time t
ON_DLY
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = L, SEL1 = L 10 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = H, SEL1 = L
100
μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = L, SEL1 = H 200 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = H, SEL1 = H 450 μs
WLCSP
Turn-On Rise Time t
RISE
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF, ADP198ACBZ-R7 12 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF, ADP198ACBZ-11-R7 650 μs
LFCSP
Turn-On Rise Time t
RISE
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = L, SEL1 = L 12 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = H, SEL1 = L 100 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = L, SEL1 = H 250 μs
V
IN
= 3.6 V, I
LOAD
= 200 mA, V
EN
= 1.5 V, C
LOAD
= 1 μF; SEL0 = H, SEL1 = H 650 μs
ADP198 Data Sheet
Rev. G | Page 4 of 16
Timing Diagram
09484-033
EN
VOUT
TURN-ON
RISE TIME
90%
10%
TURN-OFF
DELAY
TURN-OFF
FALL TIME
TURN-ON
DELAY
START UP
TIME
Figure 3. Timing Diagram
Data Sheet ADP198
Rev. G | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN to GND Pins
−0.3 V to +7 V
VOUT to GND Pins −0.3 V to +7 V
EN to GND Pins −0.3 V to +7 V
Continuous Drain Current
T
A
= 25°C ±1000 mA
T
A
= 85°C ±1000 mA
T
A
= 125°C ±600mA
Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of
the
device at these or any
other condi
tions above those indicated in the operationa
l
section
of t
his specification is not implied. Exposure to a
bsolute
maximum rating c
onditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP198 can be damaged if the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that T
J
is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.
In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long
as the junction temperature is within specification limits. The
junction temperature (T
J
) of the device is dependent on the
ambient temperature (T
A
), the power dissipation of the device
(P
D
), and the junction-to-ambient thermal resistance of the
package (θ
JA
).
Maximum junction temperature (T
J
) is calculated from the
ambient temperature (T
A
) and power dissipation (P
D
) using the
formula
T
J
= T
A
+ (P
D
× θ
JA
)
The junction-to-ambient thermal resistance
JA
) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
JA
may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θ
JA
are based on a 4-layer, 4 inch × 3 inch PCB. Refer
to JESD 51-7 and JESD 51-9 for detailed information regarding
board construction. For additional information, see the AN-617
Application Note, MicroCSP Wafer Level Chip Scale Package.
Ψ
JB
is the junction-to-board thermal characterization parameter
with units of °C/W. The Ψ
JB
of the package is based on modeling
and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ
JB
measures the component power flowing through
multiple thermal paths rather than a single path as in thermal
resistance, θ
JB
. Therefore, Ψ
JB
thermal paths include convection
from the top of the package as well as radiation from the package,
factors that make Ψ
JB
more useful in real-world applications.
Maximum junction temperature (T
J
) is calculated from the
board temperature (T
B
) and power dissipation (P
D
) using the
formula
T
J
= T
B
+ (P
D
× Ψ
JB
)
Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ
JB
.
THERMAL RESISTANCE
θ
JA
and Ψ
JB
are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Ψ
JB
Unit
4-Ball, 0.5 mm Pitch WLCSP 260 4 58.4 °C/W
8-Lead, 2 mm × 2 mm LFCSP 72.1 42.3 47.1 °C/W
ESD CAUTION

ADP198ACPZ-R7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Power Switch ICs - Power Distribution Logic-Cntrld 1A Hi-Side Load Switch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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