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SZESD7351P2T5G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1 Publication Order Number:
ESD7351/D
ESD7351, SZESD7351
Series
Transient Voltage
Suppressors
The ESD7351 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, low leakage, and fast response time, make these parts
ideal for ESD protection on designs where board space is at a
premium. Because of its low capacitance, it is suited for use in high
frequency designs such as USB 2.0 high speed and antenna line
applications.
Features
• Low Capacitance (0.6 pF Max, I/O to GND)
• Low Clamping Voltage
• Stand−off Voltage: 3.3 V
• Low Leakage
• Response Time is < 1 ns
• Low Dynamic Resistance < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact
Air
±20
±20
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
°P
D
° 150 mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
MARKING
DIAGRAMS
PIN CONFIGURATION
AND SCHEMATIC
http://onsemi.com
X, XX = Specific Device Code
M = Date Code
1
Cathode
2
Anode
SOD−323
CASE 477
SOD−523
CASE 502
SOD−923
CASE 514AB
1
2
AF
M
1
2
AE
12
M
AD M
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
ESD7351, SZESD7351 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
3.3 V
Breakdown Voltage (Note 2) V
BR
I
T
= 1 mA 5.0 V
Reverse Leakage Current I
R
V
RWM
= 3.3 V < 1.0 50 nA
Clamping Voltage (Note 3) V
C
I
PP
= 1 A 8.0 V
Clamping Voltage (Note 3) V
C
I
PP
= 3 A 10 V
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f < 1 GHz
0.43
0.43
0.6
0.6
pF
Dynamic Resistance R
DYN
TLP Pulse 0.35
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−5 waveform.
ESD7351, SZESD7351 Series
http://onsemi.com
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
Figure 1. IV Characteristics Figure 2. CV Characteristics
I (A)
V (V)
CAPACITANCE (pF)
VBias (V)
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1 1.5 2 2.5 3 3.5
Figure 3. RF Insertion Loss Figure 4. Capacitance over Frequency
CAPACITANCE (pF)
FREQUENCY (GHz)
dB
FREQUENCY (Hz)
1.E+08 1.E+09 1.E+10
2
TBD
1.E−12
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
012345678
0
−2
−4
−6
−8
−10
−12
−14
Figure 5. Positive TLP I−V Curve
Figure 6. Negative TLP I−V Curve
TLP CURRENT (A)
V
C
, VOLTAGE (V)
EQUIVALENT V
IEC
(kV)
TLP CURRENT (A)
V
C
, VOLTAGE (V)
EQUIVALENT V
IEC
(kV)
NOTE: TLP parameter: Z
0
= 50 W, t
p
= 100 ns, t
r
= 300 ps, averaging window: t
1
= 30 ns to t
2
= 60 ns. V
IEC
is the equivalent voltage
stress level calculated at the secondary peak of the IEC 61000−4−2 waveform at t = 30 ns with 2 A/kV. See TLP description
below for more information.
0
2
4
6
8
0
2
4
6
8
10
12
14
16
02468101214161820
0
2
4
6
8−16
−14
−12
−10
−8
−6
−4
−2
0
02468101214161820
P1-P3P4-P6P7-P8

SZESD7351P2T5G

Mfr. #:
Buy SZESD7351P2T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LOW CAP ESD IN SOD-923
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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