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LM285D-1.2R2

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 9
1 Publication Order Number:
LM285/D
LM285, LM385B
Micropower Voltage
Reference Diodes
The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
• Operating Current from 10 mA to 20 mA
• 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
• Low Temperature Coefficient
• 1.0 W Dynamic Impedance
• Surface Mount Package Available
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Representative Schematic Diagram
Open
for 1.235 V
10 k
Cathode
Anode
100 k
500 W
600 k
600 k
425 k
74.3 k
8.45 k
600 k
360 k
Open
for 2.5 V
-
+
LM385−1.2
1.235 V
3.3 k
1.5 V
Battery
Standard Application
SOIC−8
D SUFFIX
CASE 751
www.onsemi.com
(Bottom View)
312
8
7
6
5
Cathod
e
N.C.
N.C.
N.C.
4
3
2
Anode
N.C.
N.C.
1
N.C.
N.C.
Cathode
Anode
TO−92
(TO−226)
Z SUFFIX
CASE 29
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
xxx = 1.2 or 2.5
y = 2 or 3
z = 1 or 2
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
LMy85
Z−xxx
ALYWG
G
1
8
(Note: Microdot may be in either location)
y85−z
ALYW
G
1
8
LM285, LM385B
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2
MAXIMUM RATINGS (T
A
= 25°C, unless otherwise noted)
Rating
Symbol Value Unit
Reverse Current I
R
30 mA
Forward Current I
F
10 mA
Operating Ambient Temperature Range
LM285
LM385
T
A
−40 to +85
0 to +70
°C
Operating Junction Temperature T
J
+150 °C
Storage Temperature Range T
stg
−65 to + 150 °C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
4000
400
2000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol
LM285−1.2 LM385−1.2/LM385B−1.2
Unit
Min Typ Max Min Typ Max
Reverse Breakdown Voltage (I
Rmin
v I
R
v 20 mA)
LM285−1.2/LM385B−1.2
T
A
= T
low
to T
high
(Note 1)
LM385−1.2
T
A
= T
low
to T
high
(Note 1)
V
(BR)R
1.223
1.200
−
−
1.235
−
−
−
1.247
1.270
−
−
1.223
1.210
1.205
1.192
1.235
−
1.235
−
1.247
1.260
1.260
1.273
V
Minimum Operating Current
T
A
= 25°C
T
A
= T
low
to T
high
(Note 1)
I
Rmin
−
−
8.0
−
10
20
−
8.0
−
15
20
mA
Reverse Breakdown Voltage Change with Current
I
Rmin
v I
R
v 1.0 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0 mA v I
R
v 20 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
DV
(BR)R
−
−
−
−
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
1.0
1.5
20
25
mV
Reverse Dynamic Impedance
I
R
= 100 mA, T
A
= +25°C
Z
− 0.6 − − 0.6 −
W
Average Temperature Coefficient
10 mA v I
R
v 20 mA, T
A
= T
low
to T
high
(Note 1)
DV
(BR)
/DT
− 80 − − 80 −
ppm/°C
Wideband Noise (RMS)
I
R
= 100 mA, 10 Hz v f v 10 kHz
n
− 60 − − 60 −
mV
Long Term Stability
I
R
= 100 mA, T
A
= +25°C ± 0.1°C
S
− 20 − − 20 −
ppm/kHR
Reverse Breakdown Voltage (I
Rmin
v I
R
v 20 mA)
LM285−2.5/LM385B−2.5
T
A
= T
low
to T
high
(Note 1)
LM385−2.5
T
A
= T
low
to T
high
(Note 1)
V
(BR)R
2.462
2.415
−
−
2.5
−
−
−
2.538
2.585
−
−
2.462
2.436
2.425
2.400
2.5
−
2.5
−
2.538
2.564
2.575
2.600
V
Minimum Operating Current
T
A
= 25°C
T
A
= T
low
to T
high
(Note 1)
I
Rmin
−
−
13
−
20
30
−
−
13
−
20
30
mA
1. T
low
= −40°C for LM285−1.2, LM285−2.5
T
high
= +85°C for LM285−1.2, LM285−2.5
T
low
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
LM285, LM385B
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3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol
LM285−1.2 LM385−1.2/LM385B−1.2
Unit
Min Typ Max Min Typ Max
Reverse Breakdown Voltage Change with Current
I
Rmin
v I
R
v 1.0 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 2)
1.0 mA v I
R
v 20 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 2)
DV
(BR)R
−
−
−
−
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
2.0
2.5
20
25
mV
Reverse Dynamic Impedance
I
R
= 100 mA, T
A
= +25°C
Z
− 0.6 − − 0.6 −
W
Average Temperature Coefficient
20 mA v I
R
v 20 mA, T
A
= T
low
to T
high
(Note 2)
DV
(BR)
/DT
− 80 − − 80 −
ppm/°C
Wideband Noise (RMS)
I
R
= 100 mA, 10 Hz v f v 10 kHz
n
− 120 − − 120 −
mV
Long Term Stability
I
R
= 100 mA, T
A
= +25°C ± 0.1°C
S
− 20 − − 20 −
ppm/kHR
2. T
low
= −40°C for LM285−1.2, LM285−2.5
T
high
= +85°C for LM285−1.2, LM285−2.5
T
low
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
P1-P3P4-P6P7-P9

LM285D-1.2R2

Mfr. #:
Buy LM285D-1.2R2
Manufacturer:
ON Semiconductor
Description:
IC VREF SHUNT 1.235V 8SOIC
Lifecycle:
New from this manufacturer.
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