DPG30C300HB
100 300 5000 200 400 600
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C]
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
0
100
200
300
400
V
FR
[V]
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
I
RM
[A]
Q
rr
[μC]
I
F
[A]
V
F
id-]V[
F
/dt [A/μs]
t
rr
[ns]
V
FR
t
fr
I
RM
Q
rr
7.5 A
-di
F
/dt [A/μs]
-di
F
/dt [A/μs]
7.5 A
15 A
I
F
=30A
-di
F
/dt [A/μs]
t
fr
[ns]
1 10 100 1000 10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
t[ms]
Z
thJC
[K/W]
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
E
rec
[μJ]
-di
F
/dt [A/μs]
30 A
15 A
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
Fig. 8 Transient thermal resistance junction to case
T
VJ
=25°C
150°C
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 125°C
V
R
= 200 V
T
VJ
= 125°C
I
F
=15A
V
R
= 200 V
T
VJ
=125°C
V
R
=200V
T
VJ
=125°C
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
20131126aData according to IEC 60747and per semiconductor unless otherwise specified
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