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PHX18NQ11T,127

P1-P3P4-P6P7-P9P10-P12
9397 750 14444 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 24 March 2005 7 of 12
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=25°C; V
DS
=5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
03aa32
0
1
2
3
4
5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
min
typ
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0246
V
GS
(V)
I
D
(A)
maxtypmin
03am67
10
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
9397 750 14444 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 24 March 2005 8 of 12
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
7. Isolation characteristics
T
j
=25°C and 150 °C; V
GS
=0V I
D
= 3 A; V
DD
= 20 V and 80 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 13. Gate-source voltage as a function of gate
charge; typical values
03am66
0
4
8
12
0 0.3 0.6 0.9 1.2
V
SD
(V)
I
S
(A)
T
j
= 25 °C150 °C
V
GS
= 0 V
03am68
0
2
4
6
8
10
0 5 10 15 20 25
QG (nC)
V
GS
(V)
I
D
= 3 A
T
j
= 25 °C
20 V
V
DD
= 80 V
Table 6: Isolation Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(isol)RMS
RMS isolation voltage from all three
terminals to external heatsink
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust-free
- - 2500 V
C
(d-h)
Capacitance from drain to external
heatsink
-10- pF
9397 750 14444 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 24 March 2005 9 of 12
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
8. Package outline
Fig 14. Package outline SOT186A (3-lead TO-220F)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT186A 3-lead TO-220F
0 5 10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
A
A
1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
D
D
1
L
L
2
L
1
b
1
b
2
e
1
e
b
w M
1
23
q
E
P
T
UNIT
D
b
1
D
1
e
qQPL
c
L
2
(1)
max.
e
1
A
5.08
3
mm
4.6
4.0
A
1
2.9
2.5
b
0.9
0.7
1.1
0.9
b
2
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5 0.4
L
1
3.30
2.79
j
2.7
1.7
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
02-03-12
02-04-09
mounting
base
P1-P3P4-P6P7-P9P10-P12

PHX18NQ11T,127

Mfr. #:
Buy PHX18NQ11T,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 110V 12.5A SOT186A
Lifecycle:
New from this manufacturer.
Delivery:
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