NTS245SFT3G

© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 0
1 Publication Order Number:
NTS245SF/D
NTS245SF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
Typical Applications
Switching Power Supplies including Compact Adapters and Flat
Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Automotive LED Lighting
MARKING DIAGRAM
2AR = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
http://onsemi.com
SOD−123FL
CASE 498
PLASTIC
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS245SFT1G SOD−123
(Pb−Free)
3,000/
Tape & Ree
l
2ARMG
G
NTS245SFT3G SOD−123
(Pb−Free)
10,000/
Tape & Ree
l
NTS245SF
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current
(T
L
= 125°C)
I
O
2.0 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
L
= 120°C)
I
FRM
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
23 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
330 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.63
0.55
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
90
5
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
NTS245SF
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.21.00.80.60.40.2
0.1
1
10
100
1.21.00.8 1.60.60.40.2
0.1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
35155
1.E−06
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
1010.1
10
1000
110903010
0
1
2
3
4
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
25 45
1.E−05
1.E−04
1.E−03
1.E−02
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
3525155
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
45
1.E−06
1.E−04
1.E−03
1.E−02
1.E−01
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
T
J
= 25°C
50 70 130
Square Wave
DC
R
q
JL
= 24.4°C/W
1.10.1 0.3 0.90.70.5 1.4 1.8
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 90°C
1.E−07
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 90°C
1.E−05
100
150
1

NTS245SFT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2A 45V LOW VF TRENCH REC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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