1N5768

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0078 Rev. 1 (082463) Page 1 of 4
DEVICES LEVELS
1N5768 JAN
JANTX
JANTXV
DESCRIPTION
These low capacitance diode arrays with common cathode are multiple, discrete,
isolated junctions fabricated by a planar process and mounted in a 10-PIN
package for use as steering diodes protecting up to eight I/O ports from ESD,
EFT, or surge by directing them to the positive side of the power supply line (see
figure 1). This circuit application is further complimented by the 1N5770
(separate data sheet) that has a common anode. An external TVS diode may be
added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such as
high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
FEATURES
¾ Hermetic Ceramic Package
¾ Isolated Diodes to Eliminate Cross-Talk Voltages
¾ High Breakdown Voltage V
BR
> 60 V at 10 μA
¾ Low Leakage I
R
< 100nA at 40 V
¾ Low Capacitance C < 4.0 pF
¾ Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.
10-PIN Ceramic
Flat Pack
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0078 Rev. 1 (082463) Page 2 of 4
APPLICATIONS / BENEFITS
¾ High Frequency Data Lines
¾ RS-232 & RS-422 Interface Networks
¾ Ethernet: 10 Base T
¾ Computer I/O Ports
¾ LAN
¾ Switching Core Drivers
¾ IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20 μs
MAXIMUM RATINGS
¾ V
BR
Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
¾ I
O
Continuous Forward Current 300 mA (Notes 1 & 3)
¾ I
FSM
Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
¾ 400 mW Power Dissipation per Junction @ 25
o
C
¾ 500 mW Power Dissipation per Package @ 25
o
C (Note 4)
¾ Operating Junction Temperature range –65 to +150
o
C
¾ Storage Temperature range of –65 to +200
o
C
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/°C above +25°C
NOTE 4: Derate at 4.0 mW/°C above +25°C
MECHANICAL AND PACKAGING
¾ 10-PIN Ceramic Flat Pack
¾ Weight 0.25 grams (approximate)
¾ Marking: Logo, part number, date code and dot identifying pin #1
¾ Carrier Tubes; 19 pcs (standard)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0078 Rev. 1 (082463) Page 3 of 4
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
o
C unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
V
F1
I
F
= 100 mA
(Note 1)
MAXIMUM
FORWARD
VOLTAGE
V
F2
I
F
= 500 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
I
R1
V
R
= 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
C
t
V
R
= 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY
TIME
t
fr
I
F
= 500 mA
MAXIMUM
REVERSE
RECOVERY
TIME
trr
I
F
= I
R
= 200 mA
I
rr
= 20 mA
R
L
= 100 ohms
PART
NUMBER
Vdc Vdc
μAdc
pF ns ns
1N5768
1 1.5 0.1 4.0 40 20
NOTE 1: Pulsed: P
W
= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
SYMBOLS & DEFINITIONS
Symbol DEFINITION
V
BR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
V
F
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
I
R
Maximum Reverse Current: The maximum reverse current that will flow at the specified voltage
and temperature.
I
FSM
Forward Surge Current: The peak forward surge current at a specified pulse width
C
t
Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated
in picofarads.

1N5768

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Diode Array
Lifecycle:
New from this manufacturer.
Delivery:
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