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MJF18004

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1 Publication Order Number:
MJE18004/D
MJE18004, MJF18004
Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state−of−the−art
die designed for use in 220 V line−operated switch−mode Power
supplies and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain h
FE
♦
Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125_C
• ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
• Two Package Choices: Standard TO−220 or Isolated TO−220
• MJF18004, Case 221D, is UL Recognized at 3500 V
RMS
: File
#E69369
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
450 Vdc
Collector−Base Breakdown Voltage V
CES
1000 Vdc
Emitter−Base Voltage V
EBO
9.0 Vdc
Collector Current − Continuous I
C
5.0 Adc
Collector Current − Peak (Note 1) I
CM
10 Adc
Base Current − Continuous I
B
2.0 Adc
Base Current − Peak (Note 1) I
BM
4.0 Adc
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
(for 1 sec, R.H. < 30%, T
A
= 25_C)
V
ISOL
MJF18004
4500
3500
1500
V
Total Device Dissipation @ T
C
= 25_C
MJE18004
MJF18004
Derate above 25°C MJE18004
MJF18004
P
D
75
35
0.6
0.28
W
W/_C
Operating and Storage Temperature T
J
, T
stg
−65 to 150
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
MJE18004
MJF18004
R
q
JC
1.65
3.55
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
www.onsemi.com
MARKING
DIAGRAMS
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MJE18004G
AYWW
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
3
1
2
MJF18004G
AYWW
4
1
BASE
3
EMITTER
COLLECTOR
2,4
MJE18004, MJF18004
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH) V
CEO(sus)
450 − − Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0) I
CEO
− − 100
mAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0) (T
C
= 25_C)
(T
C
= 125_C)
Collector Cutoff Current (V
CE
= 800 V, V
EB
= 0) (T
C
= 125_C)
I
CES
−
−
−
−
−
−
100
500
100
mAdc
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0) I
EBO
− − 100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Base−Emitter Saturation Voltage (I
C
= 2.0 Adc, I
B
= 0.4 Adc)
V
BE(sat)
−
−
0.82
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
(I
C
= 2.0 Adc, I
B
= 0.4 Adc)
(I
C
= 2.5 Adc, I
B
= 0.5 Adc)
(T
C
= 125_C)
(T
C
= 125_C)
V
CE(sat)
−
−
−
−
−
0.25
0.29
0.3
0.36
0.5
0.5
0.6
0.45
0.8
0.75
Vdc
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 2.5 Vdc)
DC Current Gain (I
C
= 0.3 Adc, V
CE
= 5.0 Vdc)
DC Current Gain (I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
DC Current Gain (I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(T
C
= 125_C)
(T
C
= 125_C)
(T
C
= 125_C)
h
FE
12
−
14
−
6.0
−
10
21
20
−
32
11
7.5
22
−
−
34
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz) f
T
− 13 − MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
ob
− 50 65 pF
Input Capacitance (V
EB
= 8.0 V) C
ib
− 800 1000 pF
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising I
B1
reaches 90% of
final I
B1
(see Figure 18)
(I
C
= 1.0 Adc
I
B1
= 100 mAdc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
V
CE(dsat)
−
−
6.8
14
−
−
Vdc
3.0 ms
(T
C
= 125°C)
−
−
2.4
5.6
−
−
(I
C
= 2.0 Adc
I
B1
= 400 mAdc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
−
−
11.3
15.5
−
−
3.0 ms
(T
C
= 125°C)
−
−
1.3
6.1
−
−
MJE18004, MJF18004
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
(I
C
= 1.0 Adc, I
B1
= 0.1 Adc,
I
B2
= 0.5 Adc, V
CC
= 300 V)
(T
C
= 125°C)
t
on
−
−
210
180
300
−
ns
Turn−Off Time
(T
C
= 125°C)
t
off
−
−
1.0
1.3
1.7
−
ms
Turn−On Time
(I
C
= 2.0 Adc, I
B1
= 0.4 Adc,
I
B1
= 1.0 Adc, V
CC
= 300 V)
(T
C
= 125°C)
t
on
−
−
75
90
110
−
ns
Turn−Off Time
(T
C
= 125°C)
t
off
−
−
1.5
1.8
2.5
−
ms
Turn−On Time
(I
C
= 2.5 Adc, I
B1
= 0.5 Adc,
I
B2
= 0.5 Adc, V
CC
= 250 V)
(T
C
= 125°C)
t
on
−
−
450
900
800
1400
ns
Storage Time
(T
C
= 125°C)
t
s
−
−
2.0
2.2
3.0
3.5
ms
Fall Time
(T
C
= 125°C)
t
f
−
−
275
500
400
800
ns
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V
CC
= 15 V, L = 200 mH)
Fall Time
(I
C
= 1.0 Adc, I
B1
= 0.1 Adc,
I
B2
= 0.5 Adc)
(T
C
= 125°C)
t
fi
−
−
100
100
150
−
ns
Storage Time
(T
C
= 125°C)
t
si
−
−
1.1
1.4
1.7
−
ms
Crossover Time
(T
C
= 125°C)
t
c
−
−
180
160
250
−
ns
Fall Time
(I
C
= 2.0 Adc, I
B1
= 0.4 Adc,
I
B2
= 1.0 Adc)
(T
C
= 125°C)
t
fi
−
−
90
150
175
−
ns
Storage Time
(T
C
= 125°C)
t
si
−
−
1.7
2.2
2.5
−
ms
Crossover Time
(T
C
= 125°C)
t
c
−
−
180
250
300
−
ns
Fall Time
(I
C
= 2.5 Adc, I
B1
= 0.5 Adc,
I
B2
= 0.5 Adc,
V
BE(off)
= −5.0 Vdc)
(T
C
= 125°C)
t
fi
−
−
70
100
130
175
ns
Storage Time
(T
C
= 125°C)
t
si
−
−
0.75
1.0
1.0
1.3
ms
Crossover Time
(T
C
= 125°C)
t
c
−
−
250
250
350
500
ns
P1-P3P4-P6P7-P9P10-P11

MJF18004

Mfr. #:
Buy MJF18004
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 450V 5A TO220FP
Lifecycle:
New from this manufacturer.
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