2N5401 Datasheet 2N5401, 2N5401RLRA, 2N5401RL1G | P1-P3

December, 2005 − Rev. 1

1 Publication Order Number:

2N5400/D

2N5400, 2N5401

Preferred Device

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol 2N5400 2N5401 Unit

Collector − Emitter Voltage V

CEO

120 150 Vdc

Collector − Base Voltage V

CBO

130 160 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

600 mAdc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not nor-

mal operating conditions) and are not valid simultaneously. If these limits are ex-

ceeded, device functional operation is not implied, damage may occur and reli-

ability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance,

Junction−to−Case

R

q

JC

83.3 °C/W

2N

540x

AYWWG

G

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

TO−92

CASE 29

STYLE 1

1

2

3

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

COLLECTOR

3

2

BASE

1

EMITTER

2N5400, 2N5401

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(1)

(I

C

= 1.0 mAdc, I

B

= 0) 2N5400

2N5401

V

(BR)CEO

120

150

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0) 2N5400

2N5401

V

(BR)CBO

130

160

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − Vdc

Collector Cutoff Current

(V

CB

= 100 Vdc, I

E

= 0) 2N5400

(V

CB

= 120 Vdc, I

E

= 0) 2N5401

(V

CB

= 100 Vdc, I

E

= 0, T

A

= 100°C) 2N5400

(V

CB

= 120 Vdc, I

E

= 0, T

A

= 100°C) 2N5401

I

CBO

−

100

50

100

50

nAdc

mAdc

Emitter Cutoff Current

(V

EB

= 3.0 Vdc, I

C

= 0)

I

EBO

− 50 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc) 2N5400

2N5401

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc) 2N5400

2N5401

(I

C

= 50 mAdc, V

CE

= 5.0 Vdc) 2N5400

2N5401

h

FE

30

50

40

60

40

50

−

180

240

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

CE(sat)

−

0.2

0.5

Vdc

Base−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

BE(sat)

−

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

C

= 10 mAdc, V

CE

= 10 Vdc, f = 100 MHz) 2N5400

2N5401

f

T

100

400

300

MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

− 6.0 pF

Small−Signal Current Gain

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz) 2N5400

2N5401

h

fe

30

40

200

−

Noise Figure

(I

C

= 250 mAdc, V

CE

= 5.0 Vdc, R

S

= 1.0 kW, f = 1.0 kHz)

NF − 8.0 dB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5400, 2N5401

http://onsemi.com

3

Figure 1. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

30

100

150

200

0.1

h , CURRENT GAIN

0.5 2.0 3.0 100.2 0.3

20

1.0 5.0

FE

T

J

= 125°C

25°C

−55°C

70

50

20 30 50 100

V

CE

= − 1.0 V

V

CE

= − 5.0 V

Figure 2. Collector Saturation Region

I

B

, BASE CURRENT (mA)

1.0

0.1 0.5 2.0 100.2 1.0 5.0 20 50

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.005 0.01 0.02 0.05

Figure 3. Collector Cut−Off Region

V

BE

, BASE−EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)μI

C

10

3

0.10.3 0.2

10

2

10

1

10

0

10

−1

10

−2

10

−3

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

I

C

= 1.0 mA 10 mA 30 mA 100 mA

V

CE

= 30 V

I

C

= I

CES

T

J

= 125°C

75°C

25°C

REVERSE FORWARD

2N5401

2N5401

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