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SIS612EDNT-T1-GE3

P1-P3P4-P6P7-P8
SiS612EDNT
www.vishay.com
Vishay Siliconix
S13-1675-Rev. A, 29-Jul-13
4
Document Number: 62874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
10
0 10 20 30 40 50
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 20 A
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.2
0.4
0.6
0.8
1
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.7
1
1.3
1.6
1.9
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 14 A
V
GS
= 4.5 V, 3.7 V, 2.5 V
0.000
0.003
0.006
0.009
0.012
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125
°
C
T
J
= 25
°
C
I
D
= 20 A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
SiS612EDNT
www.vishay.com
Vishay Siliconix
S13-1675-Rev. A, 29-Jul-13
5
Document Number: 62874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area
Power, Junction-to-Case
Current Derating*
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.01
0.1
1
10
100
1000
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
10s, 1 s
DC
0
16
32
48
64
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
0
18
36
54
72
90
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
SiS612EDNT
www.vishay.com
Vishay Siliconix
S13-1675-Rev. A, 29-Jul-13
6
Document Number: 62874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62874
.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 81 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
P1-P3P4-P6P7-P8

SIS612EDNT-T1-GE3

Mfr. #:
Buy SIS612EDNT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8S
Lifecycle:
New from this manufacturer.
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