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NJVMJD243T4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 17
1 Publication Order Number:
MJD243/D
MJD243(NPN),
MJD253(PNP)
Complementary Silicon
Plastic Power Transistors
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
• High DC Current Gain
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Base Voltage V
CB
100 Vdc
Collector−Emitter Voltage V
CEO
100 Vdc
Emitter−Base Voltage V
EB
7.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
12.5
0.1
W
W/°C
Total Device Dissipation
@ T
A
= 25°C (Note 2)
Derate above 25°C
P
D
1.4
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted on minimum pad sizes recommended.
IPAK
CASE 369D
STYLE 1
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
x = 4 or 5
G = Pb−Free Package
DPAK−3
CASE 369C
STYLE 1
www.onsemi.com
AYWW
J2x3G
AYWW
J253G
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
DPAKIPAK
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
2
3
4
1
2
3
4
MJD243 (NPN), MJD253 (PNP)
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
10
89.3
°C/W
2. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
100 −
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
J
= 125°C)
I
CBO
−
−
100
100
nAdc
mAdc
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
I
EBO
− 100
nAdc
DC Current Gain (Note 3)
(I
C
= 200 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
h
FE
40
15
180
−
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
−
−
0.3
0.6
Vdc
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
V
BE(sat)
− 1.8
Vdc
Base−Emitter On Voltage (Note 3)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
40 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
− 50
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. f
T
= ⎪h
FE
⎪• f
test
.
MJD243 (NPN), MJD253 (PNP)
www.onsemi.com
3
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
15
10
T
C
5
20
P
D
, POWER DISSIPATION (WATTS)
2.5
0
1.5
1
T
A
0.5
2
T
C
T
A
(SURFACE MOUNT)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
100
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
500ms
dc
1
1ms
502010521
100ms
I
C
, COLLECTOR CURRENT (AMPS)
0.02
0.05
0.2
0.5
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150°C. T
J(pk)
may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
0.01
0.02 0.05 1 2 5 10 20 50 100 2000.1 0.50.2
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
R
q
JC
(t) = r(t) q
JC
R
q
JC
= 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
RESISTANCE (NORMALIZED)
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0 (SINGLE PULSE)
Figure 3. Thermal Response
0.1
0.02
0.01
P1-P3P4-P6P7-P8

NJVMJD243T4G

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Buy NJVMJD243T4G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT BIP NPN 4A 100V TR
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