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AD8629ARZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
AD8628/AD8629/AD8630 Data Sheet
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—V
S
= 5.0 V
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 5 µV
−40°C ≤ T
A
≤ +125°C
10 µV
Input Bias Current I
B
AD8628/AD8629
30 100 pA
AD8630
100 300 pA
−40°C ≤ T
A
≤ +125°C
1.5 nA
Input Offset Current I
OS
50 200 pA
−40°C ≤ T
A
≤ +125°C
250 pA
Input Voltage Range
0
5 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 5 V 120 140
dB
−40°C ≤ T
A
≤ +125°C 115 130
dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ, V
O
= 0.3 V to 4.7 V 125 145
dB
−40°C ≤ T
A
≤ +125°C 120 135
dB
Offset Voltage Drift
∆V
OS
/∆T
−40°C ≤ T
A
≤ +125°C
0.02
µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to ground 4.99 4.996
V
−40°C ≤ T
A
≤ +125°C 4.99 4.995
V
R
L
= 10 kΩ to ground 4.95 4.98
V
−40°C ≤ T
A
≤ +125°C 4.95 4.97
V
Output Voltage Low V
OL
R
L
= 100 kΩ to V+
1 5 mV
−40°C ≤ T
A
≤ +125°C
2 5 mV
R
L
= 10 kΩ to V+
10 20 mV
−40°C ≤ T
A
≤ +125°C
15 20 mV
Short-Circuit Limit I
SC
±25 ±50
mA
−40°C ≤ T
A
≤ +125°C
±40
mA
Output Current I
O
±30
mA
−40°C ≤ T
A
≤ +125°C
±15
mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 5.5 V, −40°C ≤ T
A
≤ +125°C 115 130
dB
Supply Current per Amplifier I
SY
V
O
= V
S
/2 0.85 1.1 mA
−40°C ≤ T
A
≤ +125°C
1.0 1.2 mA
INPUT CAPACITANCE C
IN
Differential
1.5
pF
Common Mode
8.0
pF
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L
= 10 kΩ
V/µs
Overload Recovery Time
0.05
ms
Gain Bandwidth Product GBP
2.5
MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz
0.5
µV p-p
0.1 Hz to 1.0 Hz
0.16
µV p-p
Voltage Noise Density e
n
f = 1 kHz
22
nV/√Hz
Current Noise Density i
n
f = 10 Hz
5
fA/√Hz
Rev. K | Page 4 of 24
Data Sheet AD8628/AD8629/AD8630
ELECTRICAL CHARACTERISTICS—V
S
= 2.7 V
V
S
= 2.7 V, V
CM
= 1.35 V, V
O
= 1.4 V, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
1 5 µV
−40°C ≤ T
A
≤ +125°C 10 µV
Input Bias Current I
B
AD8628/AD8629 30 100 pA
AD8630 100 300 pA
−40°C ≤ T
A
≤ +125°C 1.0 1.5 nA
Input Offset Current I
OS
50 200 pA
−40°C ≤ T
A
≤ +125°C 250 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 2.7 V 115 130 dB
−40°C ≤ T
A
≤ +125°C 110 120 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ, V
O
= 0.3 V to 2.4 V 110 140 dB
−40°C ≤ T
A
≤ +125°C 105 130 dB
Offset Voltage Drift ∆V
OS
/∆T −40°C ≤ T
A
≤ +125°C 0.002 0.02 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
L
= 100 kΩ to ground 2.68 2.695 V
−40°C ≤ T
A
≤ +125°C 2.68 2.695 V
R
L
= 10 kΩ to ground 2.67 2.68 V
−40°C ≤ T
A
≤ +125°C 2.67 2.675 V
Output Voltage Low V
OL
R
L
= 100 kΩ to V+ 1 5 mV
−40°C ≤ T
A
≤ +125°C 2 5 mV
R
L
= 10 kΩ to V+ 10 20 mV
−40°C ≤ T
A
≤ +125°C 15 20 mV
Short-Circuit Limit I
SC
±10 ±15 mA
−40°C ≤ T
A
≤ +125°C ±10 mA
Output Current I
O
±10 mA
−40°C ≤ T
A
≤ +125°C ±5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 2.7 V to 5.5 V, −40°C ≤ T
A
≤ +125°C 115 130 dB
Supply Current per Amplifier I
SY
V
O
= V
S
/2 0.75 1.0 mA
−40°C ≤ T
A
≤ +125°C 0.9 1.2 mA
INPUT CAPACITANCE C
IN
Differential 1.5 pF
Common Mode 8.0 pF
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 10 kΩ 1 V/µs
Overload Recovery Time 0.05 ms
Gain Bandwidth Product
GBP
MHz
NOISE PERFORMANCE
Voltage Noise e
n
p-p 0.1 Hz to 10 Hz 0.5 µV p-p
Voltage Noise Density e
n
f = 1 kHz 22 nV/√Hz
Current Noise Density i
n
f = 10 Hz 5 fA/√Hz
Rev. K | Page 5 of 24
AD8628/AD8629/AD8630 Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage
GND – 0.3 V to V
S
+ 0.3 V
Differential Input Voltage
1
±5.0 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
ESD AD8628
HBM 8-Lead SOIC ±7000V
FICDM 8-Lead SOIC ±1500V
FICDM 5-Lead TSOT ±1000V
MM 8-Lead SOIC ±200V
ESD AD8629
HBM 8-Lead SOIC ±4000V
FICDM 8-Lead SOIC ±1000V
ESD AD8630
HBM 14-Lead SOIC ±5000V
FICDM 14-Lead SOIC
±1500V
FICDM 14-Lead TSSOP ±1500V
MM 14-Lead SOIC ±200V
1
Differential input voltage is limited to ±5 V or the supply voltage, whichever
is less.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
θ
JA
is specified for worst-case conditions, that is, θ
JA
is specified
for the device soldered in a circuit board for surface-mount
packages. This was measured using a standard two-layer board.
Table 4.
Package Type θ
JA
θ
JC
Unit
5-Lead TSOT (UJ-5) 207 61 °C/W
5-Lead SOT-23 (RJ-5) 230 146 °C/W
8-Lead SOIC_N (R-8) 158 43 °C/W
8-Lead MSOP (RM-8) 190 44 °C/W
14-Lead SOIC_N (R-14) 105 43 °C/W
14-Lead TSSOP (RU-14) 148 23 °C/W
ESD CAUTION
Rev. K | Page 6 of 24
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

AD8629ARZ-REEL7

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Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers Zero Drift RRIO SGL-Supply
Lifecycle:
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