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VND05BSP-E

P1-P3P4-P6P7-P9
VND05BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
April 2001
BLOCK DIAGRAM
TYPE V
DSS
R
DS(on
)I
OUT
V
CC
VND05BSP 40 V 0.2
Ω
1.6 A 26 V
■
OUTPUT CURRENT (CONTINUOUS):
9A @ T
c
= 85
o
C PER CHANNEL
■
5V LOGIC LEVEL COMPATIBLE INPUT
■
THERMAL SHUT-DOWN
■
UNDER VOLTAGE PROTECTION
■
OPEN DRAIN DIAGNOSTIC OUTPUT
■
INDUCTIVE LOAD FAST
DEMAGNETIZATION
■
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VND05BSP is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded. This device has two
channels, and a common diagnostic. Built-in
thermal shut-down protects the chip from over
temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to V
CC
.
1
10
PowerSO-10
®
1/9
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Breakdown Voltage 40 V
I
OUT
Output Current (cont.) at T
c
= 85
o
C9A
I
OUT
(RMS) RMS Output Current at T
c
= 85
o
C and f > 1Hz 9 A
I
R
Reverse Output Current at T
c
= 85
o
C-9A
I
IN
Input Current
±
10 mA
-V
CC
Reverse Supply Voltage -4 V
I
STAT
Status Current
±
10 mA
V
ESD
Electrostatic Discharge (1.5 k
Ω
, 100 pF)
2000 V
P
tot
Power Dissipation at T
c
= 25
o
C 59 W
T
j
Junction Operating Temperature -40 to 150
o
C
T
stg
Storage Temperature -55 to 150
o
C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VND05BSP
2/9
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max
2.1
50
o
C/W
o
C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS
(8 < V
CC
< 16 V; -40
≤
T
j
≤
125
o
C unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
Supply Voltage 6 13 26 V
In(*) Nominal Current
T
c
= 85
o
C V
DS(on)
≤
0.5 V
CC
= 13 V
1.6 2.6 A
R
on
On State Resistance I
OUT
= I
n
V
CC
= 13 V T
j
= 25
o
C 0.13 0.2
Ω
I
S
Supply Current Off State T
j
= 25
o
C V
CC
= 13 V 35 100
µ
A
V
DS(MAX)
Maximum Voltage Drop I
OUT
= 7.5 A T
j
= 85
o
C V
CC
= 13 V 1.44 2.3 V
R
i
Output to GND internal
Impedance
T
j
= 25
o
C 5 10 20 K
Ω
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(^) Turn-on Delay Time Of
Output Current
R
out
= 5.4
Ω
5 25 200
µ
s
t
r
(^) Rise Time Of Output
Current
R
out
= 5.4
Ω
10 50 180
µ
s
t
d(off)
(^) Turn-off Delay Time Of
Output Current
R
out
= 5.4
Ω
10 75 250
µ
s
t
f
(^) Fall Time Of Output
Current
R
out
= 5.4
Ω
10 35 180
µ
s
(di/dt)
on
Turn-on Current Slope
R
out
= 5.4
Ω
0.003 0.1 A/
µ
s
(di/dt)
off
Turn-off Current Slope
R
out
= 5.4
Ω
0.005 0.1 A/
µ
s
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IL
Input Low Level
Voltage
1.5 V
V
IH
Input High Level
Voltage
3.5 (
•
)V
V
I(hyst.)
Input Hysteresis
Voltage
0.2 0.9 1.5 V
I
IN
Input Current V
IN
= 5 V T
j
= 25
o
C 30 100
µ
A
V
ICL
Input Clamp Voltage I
IN
= 10 mA
I
IN
= -10 mA
56
-0.7
7V
V
VND05BSP
3/9
P1-P3P4-P6P7-P9

VND05BSP-E

Mfr. #:
Buy VND05BSP-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers 40V 1.6A Hi-Side SSR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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