MS2209
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DESCRIPTION:
The MS2209 is a broadband, high peak pulse power silicon NPN
bipolar device specifically designed for avionics applications requiring
broad bandwidth with moderate duty cycles and pulse width
constraints such as ground/ship based DME/TACAN.
This device is also designed for specialized applications including
JTIDS applications when duty cycle is moderately higher. Gold
metallization and emitter ballasting assure high reliability under Class
C amplifier operation.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CC
Collector Supply Voltage 50 V
I
C
Device Current 7.0 A
P
DISS
Power Dissipation 220 W
T
J
Junction Temperature (RF Pulsed Operation) +200
°C
T
STG
Storage Temperature -65 to +200
°C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance 0.80
°C/W
Rev B- September 2008
Features
• 225 MHz BANDWIDTH
• COMMON BASE
• GOLD METALLIZATION
• CLASS C OPERATION
• POUT = 90 W MIN. WITH 8.4 dB GAIN
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
