1/5
STPS160H100TV
®
July 2003 - Ed: 3A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
I
F(AV)
2x80A
V
RRM
100 V
Tj (max) 150 °C
V
F
(max) 0.68 V
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTION PACKAGE
INSULATED PACKAGE:
Insulating Voltage = 2500 V
(RMS)
Capacitance = 45 pF
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
DESCRIPTION
ISOTOP
TM
K2
K1
A2
A1
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
RMS forward current 180 A
I
F(AV)
Average forward current Tc = 110°C
δ = 0.5
Per diode
Per device
80
160
A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal 1000 A
I
RRM
Repetitive peak reverse current tp=2µssquare F = 1kHz 2 A
I
RSM
Non repetitive peak reverse current tp = 100 µs square 10 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C 78400 W
T
stg
Storage temperature range -55 to+150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
