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VNB35NV04

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
®
July 2003 1/19
VNB35NV04 / VNP35NV04
/ VNV35NV04 / VNW35NV04
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
(*) For PowerSO-10 only
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NV04 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
TYPE R
DS(on)
I
lim
V
clamp
VNB35NV04
VNP35NV04
VNV35NV04
VNW35NV04
10 mΩ (*) 30 A 40 V
BLOCK DIAGRAM
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
FC01000
D
2
PAK
PowerSO-10
™
TO-220
1
10
1
2
3
1
3
ORDER CODES:
D
2
PAK
VNB35NV04
TO-220 VNP35NV04
PowerSO-10
™
VNV35NV04
TO-247 VNW35NV04
1
2
3
TO-247
2/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
Symbol Parameter
Value Unit
PowerSO-10
™ D
2
PAK TO-220 TO-247
V
DS
Drain-source Voltage (V
IN
=0V) Internally Clamped V
V
IN
Input Voltage Internally Clamped V
I
IN
Input Current +/-20 mA
R
IN MIN
Minimum Input Series Impedance 4.7 Ω
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -30 A
V
ESD1
Electrostatic Discharge (R=1.5KΩ, C=100pF) 4000 V
V
ESD2
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
16500 V
P
tot
Total Dissipation at T
c
=25°C 125 125 125 208 W
T
j
Operating Junction Temperature Internally limited °C
T
c
Case Operating Temperature Internally limited °C
T
stg
Storage Temperature -55 to 150 °C
CURRENT AND VOLTAGE CONVENTIONS
(*) For the pins configuration related to TO-220, TO-247, D
2
PAK, see outlines at page 1.
1
2
3
4
5
6
7
8
9
10
11
SOURCE
SOURCE
N.C.
SOURCE
SOURCE
INPUT
INPUT
INPUT
INPUT
INPUT
DRAIN
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
3/19
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
(*) When mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < T
j
< 150°C, unless otherwise specified)
OFF
ON
Symbol Parameter
Value
Unit
PowerSO-10
™ D2PAK TO-220 TO-247
R
thj-case
Thermal Resistance Junction-case}}} MAX 1 1 1 0.6 °C/W
R
thj-amb
Thermal Resistance Junction-ambient MAX 50(*) 50(*) 50 30 °C/W
Symbol Parameter Test Conditions Min Typ Max Unit
V
CLAMP
Drain-source Clamp
Voltage
V
IN
=0V; I
D
=15A 40 45 55 V
V
CLTH
Drain-source Clamp
Threshold Voltage
V
IN
=0V; I
D
=2mA 36 V
V
INTH
Input Threshold Voltage V
DS
=V
IN
; I
D
=1mA 0.5 2.5 V
I
ISS
Supply Current from Input
Pin
V
DS
=0V; V
IN
=5V 100 150 µA
V
INCL
Input-Source Clamp
Voltage
I
IN
=1mA
I
IN
=-1mA
6
-1.0
6.8 8
-0.3
V
I
DSS
Zero Input Voltage Drain
Current (V
IN
=0V)
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
=25V; V
IN
=0V
30
75
µA
Symbol Parameter Test Conditions
Max
Unit
PowerSO-10
D
2
PAK
TO-220 / TO-247
R
DS(on)
Static Drain-source On
Resistance
V
IN
=5V; I
D
=15A; T
j
=25°C
V
IN
=5V; I
D
=15A; T
j
=150°C
10
20
13
24
mΩ
1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

VNB35NV04

Mfr. #:
Buy VNB35NV04
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 40V 30A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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