Features
■ RoHS compliant*
■ Protects one line or one I/O port
■ Bidirectional confi guration
■ ESD protection 30 kV max.
■ Low capacitance: ~3 pF typical
■ Replaces 0805 MLV devices
Applications
■ Cellular phones
■ PDAs and notebooks
■ Digital cameras
■ MP3 players and GPS
■ USB interface
CDSOD323-TxxC - TVS Diode Array Series
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection
applications, in SOD323 package size format. The Transient Voltage Supressor Array
series offers a choice of voltage types ranging from 3 V to 24 V in a unidirectional or
bidirectional confi guration. Bourns
®
Chip Diodes conform to JEDEC standards, are
easy to handle on standard pick and place equipment and their fl at confi guration
minimizes roll away.
The Bourns
®
device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Note: For 12 V and 24 V VDSL applications, the CDSOD323-TxxC-DSL family of
devices is recommended.
Electrical & Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Value Unit
Peak Pulse Power (tp = 8/20 µs) P
PP
350 W
Operating Temperature T
J
-55 to +150 °C
Storage Temperature T
STG
-55 to +150 °C
Notes:
1. Part numbers with suffi x “C” indicate bidirectional device, i.e. CDSOD323-T05C.
2. For bidirectional devices only, the electrical specifi cations apply in both directions.
1
2
UNIDIRECTIONAL
1
2
BIDIRECTIONAL
Parameter Symbol
CDSOD323-
Unit
Uni-
T03
Bi-
T03C
Uni-
T05
Bi-
T05C
Uni-
T08
Bi-
T08C
Uni-
T12
Bi-
T12C
Minimum Breakdown Voltage @ 1 mA V
BR
4.0 6.0 8.5 13.3 V
Working Peak Voltage V
WM
3.3 5.0 8.0 12.0 V
Maximum Clamping Voltage @ I
P
= 1 A V
C
7.0 9.8 13.4 19.0 V
Typical Clamping Voltage
@ 8/20 µs @ I
PP
V
C
19.0 V
@ 20 A
18.3 V
@ 17 A
18.5 V
@ 17 A
28.3 V
@ 11 A
V
Maximum Leakage Current @ V
WM
I
D
5521 µA
Typical Capacitance @ 0 V, 1 MHz C
J
3pF
Parameter Symbol
CDSOD323-
Unit
Uni-
T15
Bi-
T15C
Uni-
T18
Bi-
T18C
Uni-
T24
Bi-
T24C
Minimum Breakdown Voltage @ 1 mA V
BR
16.7 20.0 26.7 V
Working Peak Voltage V
WM
15.0 18.0 24.0 V
Maximum Clamping Voltage @ I
P
= 1 A V
C
24.0 29.0 43.0 V
Typical Clamping Voltage
@ 8/20 µs @ I
PP
V
C
31.8 V
@ 10 A
45.0 V
@ 8 A
56.0 V
@ 6 A
V
Maximum Leakage Current @ V
WM
I
D
1µA
Typical Capacitance @ 0 V, 1 MHz C
J
3pF
