VS-ETF150Y65U
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Vishay Semiconductors
Revision: 16-Jun-16
10
Document Number: 95706
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Fig. 23 - V
GEth
vs. I
C
(Typical Q2 - Q3 Trench IGBT Gate Threshold Voltage)
Fig. 24 - I
CES
vs. V
CES
(Typical Q2 - Q3 Trench IGBT Zero Gate Voltage Collector Current)
Fig. 25 - Energy Loss vs. I
C
(Typical Q2 - Q3 Trench IGBT Energy Loss vs. I
C
(with D2 - D3
Antiparallel Diode)), T
J
= 125 °C, V
CC
= 325 V, R
g
= 4.7 ,
V
GE
= ± 15 V, L = 500 μH
Fig. 26 - Switching Time vs. I
C
(Typical Q2 - Q3 Trench IGBT Switching Time vs. I
C
(with D2 - D3
Antiparallel
Diode)), T
J
= 125 °C, V
CC
= 325 V, R
g
= 4.7 ,
V
GE
= ± 15 V, L = 500 μH
Fig. 27 - Energy Loss vs. R
g
(Typical Q2 - Q3 Trench IGBT Energy Loss vs. R
g
(with D2 - D3
Antiparallel Diode)), T
J
= 125 °C, V
CC
= 325 V, I
C
= 1 5 0 A ,
V
GE
= ± 15 V, L = 500 μH
Fig. 28 - Switching Time vs. R
g
(Typical Q2 - Q3 Trench IGBT
Switching Time vs. R
g
(with D2 - D3 Antiparallel Diode)),
T
J
= 125 °C, V
CC
= 325 V, I
C
= 150 A, V
GE
= ± 15 V, L = 500 μH
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
012345
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
50 150 250 350 450 550 650
I
CES
(mA)
V
CES
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
0
0.5
1
1.5
2
2.5
3
3.5
40 60 80 100 120 140 160
Energy (mJ)
I
C
(A)
Eoff
Eon
10
100
1000
40 60 80 100 120 140 160
Switching Time (ns)
I
C
(A)
t
r
t
d(off)
t
d(on)
t
f
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Energy (mJ)
R
g
(
)
E
on
E
off
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
Switching Time (ns)
R
g
(Ω)
t
d(off)
t
f
t
d(on)
t
r
