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MBRB7H50-E3/81

P1-P3P4-P5
New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Document Number: 88796
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
7.5 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.55 V, 0.61 V
I
R
50 μA
T
J
max. 175 °C
CASE
PIN 2
PIN 1
TO-220AC
MBR7Hxx
ITO-220AC
MBRF7Hxx
MBRB7Hxx
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60 UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60 V
Working peak reverse voltage V
RWM
35 45 50 60 V
Maximum DC blocking voltage V
DC
35 45 50 60 V
Max. average forward rectified current (Fig. 1) I
F(AV)
7.5 A
Non-repetitive avalanche energy at 25 °C, I
AS
= 4 A, L = 10 mH E
AS
80 mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 0.5 A
Peak non-repetitive reverse energy (8/20 μs waveform) E
RSM
20 10 mJ
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k:
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88796
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width d 40 ms
Note:
(1) Automotive grade AEC Q101 qualified
Operating junction and storage temperature range T
J,
T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
V
AC
1500 V
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR7H35 MBR7H45 MBR7H50 MBR7H60 UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
MBR7H35
MBR7H45
MBR7H50
MBR7H60
UNIT
TYP. MAX. TYP. MAX.
Maximum instantaneous forward
voltage
(1)
I
F
= 7.5 A
I
F
= 7.5 A
I
F
= 15 A
I
F
= 15 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
V
F
-
0.50
-
0.61
0.63
0.55
0.75
0.66
-
0.58
-
0.68
0.73
0.61
0.87
0.72
V
Maximum reverse current
at rated V
R
(2)
T
C
= 25 °C
T
C
= 125 °C
I
R
-
3.0
50
10
-
2.0
50
10
μA
mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Thermal resistance, junction to case R
TJC
3.0 5.0 3.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR7H45-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF7H45-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB7H45-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB7H45-E3/81 1.33 81 800/reel Tape and reel
TO-220AC MBR7H45HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC MBRF7H45HE3/45
(1)
1.94 45 50/tube Tube
TO-263AB MBRB7H45HE3/45
(1)
1.33 45 50/tube Tube
TO-263AB MBRB7H45HE3/81
(1)
1.33 81 800/reel Tape and reel
New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Document Number: 88796
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Leg
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
0
2
4
6
8
10
250
50
75 100 125 150 175
MBRF
MBR, MBRB
Average Forward Cu
rrent (A)
Case Temperature (°C)
101 100
25
50
75
100
125
150
175
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.01
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1
10
100
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Figure 4. Typical Reverse Characteristics Per Leg
Figure 5. Typical Junction Capacitance Per Leg
Figure 6. Typical Transient Thermal Impedance Per Leg
6040200 10080
0.0001
0.001
0.1
0.01
1
10
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (mA)
10.1 10 100
100
1000
10
1
MBR7H35 - MBR7H45
MBR7H50 - MBR7H60
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1
0.1
1
1
10
10
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRB7H50-E3/81

Mfr. #:
Buy MBRB7H50-E3/81
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-V8P6-M387A
Lifecycle:
New from this manufacturer.
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