SIT9121AC-2B2-33E125.000000Y

SiT9121
1-220
MHz
High
Performance
Differential
Oscillator
The Smart Timing Choice
Features Applications
Any frequency between 1 MHz and 220 MHz accurate to 6 decimal
places
10GB Ethernet, SONET, SATA, SAS, Fibre Channel,
PCI-Express
LVPECL and LVDS output signaling types Telecom, networking, instrumentation, storage, servers
0.6ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth
Frequency stability as low as ±10 ppm
Industrial and extended commercial temperature ranges
Industry-standard packages: 3.2x2.5, 5.0x3.2 and 7.0x5.0 mmxmm
For frequencies higher than 220 MHz, refer to SiT9122 datasheet
Electrical Characteristics
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
LVPECL and LVDS, Common Electrical Characteristics
Supply Voltage
Vdd
2.97 3.3 3.63
V
2.25
2.5
2.75
V
2.25
3.63
V
Termination schemes in Figures 1 and 2 - XX ordering code
Output Frequency Range
f
1
220
MHz
Frequency Stability
F_stab
-10
+10 ppm
Inclusive of initial tolerance, operating temperature, rated power
supply voltage, and load variations
-20
+20 ppm
-25
+25
ppm
-50
+50 ppm
First Year Aging
F_aging1
-2
+2
ppm
25°C
10-year Aging
F_aging10
-5
+5 ppm
25°C
Operating Temperature Range
T_use
-40
+85
°C
Industrial
-20
+70 °C
Extended Commercial
Input Voltage High
VIH
70%
Vdd
Pin 1, OE or
ST
Input Voltage Low
VIL
30% Vdd
Pin 1, OE or
ST
Input Pull-up Impedance
Z_in
100 250
Pin 1, OE logic high or logic low, or
ST
logic high
2
Pin 1,
ST
logic low
Start-up Time
T_start
6
10 ms
Measured from the time Vdd reaches its rated minimum value.
Resume Time
T_resume
6
10 ms
In Standby mode, measured from the time
ST
pin
crosses
50% threshold.
Duty Cycle
DC
45
55
%
Contact SiTime for tighter duty cycle
LVPECL, DC and AC Characteristics
Current Consumption
Idd
61
69
mA
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE
35 mA
OE = Low
Output Disable Leakage Current
I_leak
1
µA
OE = Low
Standby Current
I_std
100 µA
ST
= Low, for all Vdds
Maximum Output Current
I_driver
30
mA
Maximum average current drawn from OUT+ or OUT-
Output High Voltage
VOH
Vdd-1.1
Vdd-0.7
V
See Figure 1(a)
Output Low Voltage
VOL
Vdd-1.9
Vdd-1.5
V
See Figure 1(a)
Output Differential Voltage Swing
V_Swing
1.2 1.6 2.0
V
See Figure 1(b)
Rise/Fall Time
Tr, Tf
300
700
ps
20% to 80%, see Figure 1(a)
OE Enable/Disable Time
T_oe
115
ns
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter
T_jitt
1.2
1.7
ps
f = 100 MHz, VDD = 3.3V or 2.5V
1.2
1.7
ps
f = 156.25 MHz, VDD = 3.3V or 2.5V
1.2
1.7
ps
f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random)
T_phj
0.6 0.85 ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
LVDS, DC and AC Characteristics
Current Consumption
Idd
47
55
mA
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current
I_OE
35 mA OE = Low
Differential Output Voltage
VOD
250
350
450
mV
See Figure 2
SiTime Corporation
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Rev. 1.07
Revised January 4, 2016
SiT9121
1-220
MHz
High
Performance
Differential
Oscillator
The Smart Timing Choice
Rev.
1.07
Page
2
of
8
www.sitime.com
Electrical Characteristics (continued)
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
LVDS, DC and AC Characteristics (continued)
Output Disable Leakage Current
I_leak
1
µA OE = Low
Standby Current
I_std
100
µA
ST
= Low, for all Vdds
VOD Magnitude Change
VOD
50 mV See Figure 2
Offset Voltage
VOS
1.125 1.2 1.375
V
See Figure 2
VOS Magnitude Change
VOS
50 mV See Figure 2
Rise/Fall Time
Tr, Tf
495 700 ps 20% to 80%, see Figure 2
OE Enable/Disable Time
T_oe
115
ns
f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter
T_jitt
1.2
1.7
ps
f = 100 MHz, VDD = 3.3V or 2.5V
1.2
1.7
ps
f = 156.25 MHz, VDD = 3.3V or 2.5V
1.2
1.7
ps
f = 212.5 MHz, VDD = 3.3V or 2.5V
RMS Phase Jitter (random)
T_phj
0.6 0.85 ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Pin Description
Top View
OE/ST
1 6
VDD
NC
2
5
OUT-
GND
3
4
OUT+
Absolute Maximum
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of
the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature
-65 150 °C
VDD
-0.5
4
V
Electrostatic Discharge (HBM)
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
260 °C
Thermal Consideration
Package
θJA, 4 Layer Board
(°C/W)
θJC, Bottom
(°C/W)
7050, 6-pin
142 27
5032, 6-pin
97 20
3225, 6-pin
109 20
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Pin
Map
Functionality
1
OE
Input
H
or
Open:
specified
frequency
output
L:
output
is
high
impedance
ST
Input
H
or
Open:
specified
frequency
output
L:
Device
goes
to
sleep
mode.
Supply
current
reduces
to
I_std.
2
NC
NA
No
Connect;
Leave
it
floating
or
connect
to
GND
for
better
heat
dissipation
3
GND
Power
VDD
Power
Supply
Ground
4
OUT+
Output
Oscillator
output
5
OUT-
Output
Complementary
oscillator
output
6
VDD
Power
Power
supply
voltage
SiT9121
1-220
MHz
High
Performance
Differential
Oscillator
The Smart Timing Choice
Rev.
1.07
Page
3
of
8
www.sitime.com
Waveform Diagrams
OUT-
OUT+
GND
Figure 1(a). LVPECL Voltage Levels per Differential Pin (OUT+/OUT-)
0 V
Figure 1(b). LVPECL Voltage Levels Across Differential Pair
OUT-
80%
80%
VOD
OUT+
20%
20%
VOS
Tr
Tf
GND
Figure 2. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)
80%
80%
20%
20%
VOH
VOL
Tr
Tf
V_ S w ing
t

SIT9121AC-2B2-33E125.000000Y

Mfr. #:
Manufacturer:
Description:
MEMS OSC XO 125.0000MHZ LVDS SMD
Lifecycle:
New from this manufacturer.
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